Oxide Semiconductor Gate Driver Circuit for Low Off-State Current
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Conventional gate driver circuits using amorphous silicon transistors face challenges in reducing off-state current, leading to limited drive frequency and capability due to electrical charge loss over time.
Innovation Solution
Incorporating oxide semiconductors in the channel regions of transistors within the semiconductor device to achieve low off-state current, specifically less than 1 aA/μm per 1 μm of channel width, which helps in maintaining charge and improving drive frequency and capability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of energy
If amorphous silicon transistors are used in gate driver circuits, then the device can be manufactured with conventional processes, but the off-state current is too high causing electrical charge loss over time
Solution Approach 1:
The patent changes the material parameter of the transistor channel from amorphous silicon to oxide semiconductor, which fundamentally alters the electrical characteristics to achieve ultra-low off-state current (1 aA/μm or less) while maintaining compatibility with existing manufacturing processes
Solution Approach 2:
The patent employs oxide semiconductor materials (such as In-Ga-Zn-O) as a composite solution, combining the benefits of low off-state current with the ability to be processed using conventional semiconductor manufacturing techniques, thereby resolving the contradiction between material performance and manufacturability
2Use of energy by moving object
If the drive frequency is reduced to improve power efficiency, then power consumption decreases, but the operational capability and response time of the display device deteriorates
Solution Approach 1:
By changing the material parameter to oxide semiconductor, the patent enables ultra-low off-state current operation, which allows the circuit to maintain operational capability at lower drive frequencies without sacrificing power efficiency, effectively decoupling the trade-off between frequency and power consumption
3Loss of energy
If oxide semiconductors are used in transistors, then off-state current is reduced to 1 aA/μm or less, but the manufacturing process complexity increases
Solution Approach 1:
The patent achieves universality by demonstrating that oxide semiconductor transistors can be manufactured using conventional semiconductor fabrication processes that are already established in the industry, making the advanced material accessible through existing manufacturing infrastructure without requiring entirely new process equipment
Data Source
AI summary
An object is to provide a semiconductor device with improved operation. The semiconductor device includes a first transistor, and a second transistor electrically connected to a gate of the first transistor. A first terminal of the first transistor is electrically connected to a first line. A second terminal of the first transistor is electrically connected to a second line. The gate of the first transistor is electrically connected to a first terminal or a second terminal of the second transistor.