Oxide Semiconductor Gate Stack Processing for Low-Hydrogen Reliability
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Solution Overview
Problem
Current semiconductor devices face challenges in achieving favorable electrical characteristics, reliable operation, high on-state current, excellent frequency characteristics, miniaturization, high productivity, long data retention, high-speed data writing, reduced power consumption, and design flexibility.
Innovation Solution
A semiconductor manufacturing method involving the formation of a semiconductor device with specific layers of conductors and insulators, including microwave treatment and heat treatment under reduced pressure, using gases containing oxygen to enhance the properties of oxide films and reduce hydrogen concentration, thereby improving the device's electrical performance and reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional manufacturing methods are used, then manufacturing simplicity is maintained, but electrical characteristics and reliability are insufficient
Solution Approach 1:
The patent applies parameter changes by implementing specific treatment conditions including microwave treatment at 2.45 GHz frequency, heat treatment at temperatures of 400-500°C, and controlling oxygen partial pressure at 10-1000 Pa during deposition. These parameter optimizations improve electrical characteristics without requiring fundamentally new manufacturing approaches
Solution Approach 2:
The manufacturing process employs continuous treatment sequences where microwave treatment and heat treatment are performed in succession without breaking vacuum, and multiple deposition steps are conducted continuously. This continuous process maintains process efficiency while achieving superior device characteristics
2Productivity
If device size is reduced for miniaturization, then integration density improves, but maintaining electrical performance becomes difficult
Solution Approach 1:
The patent applies local quality by forming insulator films with different properties in different regions - the gate insulator has specific thickness and composition optimized for electrical performance, while other insulator layers are optimized for their specific functions. This allows miniaturization while maintaining local electrical characteristics
Solution Approach 2:
The patent uses composite material structures including stacked insulator films with different compositions (silicon oxide, silicon nitride, silicon oxynitride) and semiconductor layers with varying stoichiometry. These composite structures enable scaled-down device dimensions while preserving electrical performance through material property optimization
3Use of energy by moving object
If power consumption is reduced, then energy efficiency improves, but on-state current and switching performance may deteriorate
Solution Approach 1:
The patent optimizes the balance between power consumption and on-state current by precisely controlling semiconductor layer composition (In-Ga-Zn-O ratio), gate insulator thickness, and treatment temperatures. These parameter adjustments enable low power consumption operation while maintaining sufficient on-state current for practical applications
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method results in semiconductor devices with improved electrical characteristics, reliable operation, high on-state current, excellent frequency performance, and reduced power consumption, enabling miniaturization and high productivity while maintaining data retention and writing speed.
Implementation Method 1
performing microwave treatment from above the first insulating film; the microwave treatment is performed using a gas containing oxygen under reduced pressure
Implementation Method 2
performing microwave treatment from above the first insulating film; the microwave treatment is performed using a gas containing oxygen under reduced pressure
Implementation Method 3
performing heat treatment on one or both of the first insulating film and the first oxide; the heat treatment is performed under reduced pressure
Implementation Method 4
depositing a first oxide film in contact with the first oxide and the first insulator in the opening; depositing a first insulating film over the first oxide film
Data Source
AI summary
A semiconductor device having favorable electrical characteristics is provided. A first oxide is formed over a substrate; a first insulator is formed over the first oxide; an opening reaching the first oxide is formed in the first insulator; a first oxide film is deposited in contact with the first oxide and the first insulator in the opening; a first insulating film is deposited over the first oxide film; microwave treatment is performed from above the first insulating film; heat treatment is performed on one or both of the first insulating film and the first oxide; a first conductive film is deposited over the first insulating film; and part of the first oxide film, part of the first insulating film, and part of the first conductive film are removed until a top surface of the first insulator is exposed, so that a second oxide, a second insulator, and a first conductor are formed. The microwave treatment is performed using a gas containing oxygen under reduced pressure, and the heat treatment is performed under reduced pressure.