Oxide Semiconductor Gate Electrode for Low-Resistance Transparent Wiring
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Solution Overview
Problem
Conventional oxide semiconductors face challenges in reducing resistance and being used as wiring materials due to difficulty in sufficiently lowering resistance, limiting their application in improving the transmittance of array substrates.
Innovation Solution
The semiconductor device employs an oxide semiconductor layer with a polycrystalline structure and an oxide conductive gate electrode of the same composition, incorporating impurity elements to reduce resistance and enhance conductivity, allowing the oxide conductive layer to function as both gate wiring and gate electrode with light transmittance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If conventional oxide semiconductor is used, then the device structure is simple and manufacturing is easy, but the resistance is high and transmittance cannot be improved
Solution Approach 1:
The patent applies parameter changes by controlling the oxygen partial pressure during the heating process. By setting specific oxygen partial pressure ranges (1×10^-3 Pa to 1 Pa) at controlled temperatures (200°C to 550°C), the oxide semiconductor layer transitions to a state with reduced resistance while maintaining the simple device structure. This parameter control enables the material to achieve low resistance without complex manufacturing processes.
2Ease of manufacture
If conventional oxide semiconductor is used, then the device structure is simple, but the light transmittance cannot be improved for display applications
Solution Approach 1:
The patent uses parameter changes through controlled heating at specific oxygen partial pressures to modify the optical properties of the oxide semiconductor. The controlled reduction process creates a material state that exhibits both low resistance and high light transmittance, enabling the same simple device structure to serve display applications requiring high transparency.
3Reliability
If impurity element is added to oxide semiconductor layer, then the resistance is reduced and conductivity is enhanced, but the composition becomes more complex
Solution Approach 1:
The patent employs an inert atmosphere approach by using controlled oxygen partial pressure environments during heating. Instead of adding impurity elements that would increase composition complexity, the method creates a controlled atmosphere (with specific oxygen partial pressures) that enables resistance reduction through atmospheric control rather than material composition changes. This maintains material simplicity while achieving the desired conductivity enhancement.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the use of the oxide semiconductor device in display devices, improving light transmittance and achieving high mobility, thereby enhancing the performance and transparency of the semiconductor device.
Implementation Method 1
a heating apparatus, heat the oxide semiconductor layer
Implementation Method 2
the oxide conductive layer includes the same impurity element as the source area and the drain area
Data Source
AI summary
A semiconductor device includes a oxide semiconductor layer provided on an insulating surface and having a channel area, a source area and a drain area sandwiching the channel area, a gate electrode opposite the channel area, and a gate insulating layer provided between the oxide semiconductor layer and the gate electrode, wherein the gate electrode is an oxide conductive layer having the same composition as the oxide semiconductor layer, and the oxide conductive layer includes the same impurity element as the source area and the drain area.