Transition Metal Oxide Hard Mask Patterning for Faster EUV Exposure

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Solution Overview

Problem

Existing EUV exposure techniques using chemically amplified resist suffer from low sensitivity and long exposure times, leading to low throughput in pattern formation for semiconductor devices.

Innovation Solution

A pattern formation method utilizing a photosensitive hard mask made of transition metal oxide films, which undergoes a state change due to heat generated by EUV exposure, allowing for selective removal of exposed or non-exposed regions to form patterns.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If chemically amplified resist is used for EUV exposure, then pattern formation can be achieved, but exposure time is long and sensitivity is low

Engineering Contradiction:

Improvepattern formation qualityVSAvoidexposure time

Core Design Contradiction:

Manufacturing precisionVSLoss of time

Solution Approach 1:

The patent changes the material parameter from organic chemically amplified resist to inorganic transition metal oxide film, which fundamentally alters the exposure mechanism from chemical amplification to direct photo-induced state change, thereby reducing exposure time while maintaining pattern formation capability

Inventive Principle:

Principle #35Parameter changes

Solution Approach 2:

The patent utilizes phase transition of transition metal oxide films (e.g., amorphous to crystalline phase change in HfO2) as the core mechanism for pattern formation. The phase transition occurs rapidly upon EUV exposure, enabling short exposure times while achieving high-quality patterns through subsequent selective removal based on phase differences

Inventive Principle:

Principle #36Phase transitions

2Manufacturing precision

If chemically amplified resist is used, then exposure can be performed, but throughput is low

Engineering Contradiction:

Improvepattern formation capabilityVSAvoidthroughput

Core Design Contradiction:

Manufacturing precisionVSProductivity

Solution Approach 1:

The patent changes the material system from chemically amplified resist to transition metal oxide film, which eliminates the need for long exposure times and complex chemical amplification processes, thereby increasing throughput while maintaining pattern formation capability

Inventive Principle:

Principle #35Parameter changes

Solution Approach 2:

The patent replaces the chemical reaction-based mechanism of chemically amplified resist with a physical phase transition mechanism in transition metal oxide films. This substitution eliminates the time-consuming chemical amplification process and enables rapid pattern formation, significantly improving throughput

Inventive Principle:

Principle #28Mechanics substitution (Replace mechanical system)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The method significantly shortens exposure time and improves throughput by utilizing the heat generated from EUV light to cause a state change in the transition metal oxide films, enhancing energy efficiency and reducing pattern width fluctuations.

Implementation Method 1

causing a state change in an exposed region by heat generated during exposure

Methodology Applied

Scientific EffectPhase transition: Phase Change

Data Source

PatentUS20260003261A1Pattern formation method

Publication Date: 2026.01.01 TOKYO ELECTRON LTD

AI summary

A pattern formation method includes: forming a photosensitive hard mask made of a transition metal oxide film on a surface of a substrate; exposing the photosensitive hard mask to EUV light in a desired pattern; causing a state change in an exposed region by heat generated during exposure; and selectively removing either a region where the state change has occurred or a region where the state change has not occurred.