Epitaxial Oxide Heterostructures for High Breakdown and UV Wavelength Control
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Solution Overview
Problem
Current semiconductor devices, particularly those used in high-power applications and UV light emitting diodes, face limitations in achieving high breakdown voltages and efficient optical wavelength control due to the use of low bandgap materials, which require multiple devices in series and complex impedance matching.
Innovation Solution
The development of epitaxial oxide materials and structures, including heterostructures with specific compositions and crystal symmetries, such as (NixMgyZn1−x−y)(AlqGa1−q)2O4, which provide high breakdown voltages and enable efficient carrier multiplication through impact ionization mechanisms, allowing for the creation of high-power devices and UV LEDs with improved performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If low bandgap semiconductor materials are used, then device complexity is reduced, but breakdown voltage is limited and multiple devices must be connected in series
Solution Approach 1:
The patent changes the fundamental material parameter (bandgap) by transitioning from conventional semiconductors to wide bandgap oxide semiconductors. This parameter change enables single-device operation at high voltages, eliminating the need for series connections and reducing overall system complexity while improving reliability
Solution Approach 2:
The patent employs composite oxide semiconductor structures with multiple layers having different bandgaps and compositions. These composite structures enable simultaneous optimization of breakdown voltage, carrier mobility, and optical properties, resolving the contradiction between device simplicity and high voltage capability
2Reliability
If wide bandgap semiconductor materials are used, then breakdown voltage is improved, but device complexity increases due to impedance matching requirements
Solution Approach 1:
The patent changes the electrical parameter of carrier mobility through material composition control in oxide semiconductors. By adjusting the bandgap and effective mass parameters, the materials achieve high carrier mobility that simplifies impedance matching, thereby reducing device complexity while maintaining high breakdown voltage
Solution Approach 2:
The oxide semiconductor materials provide multiple functions simultaneously: high breakdown voltage, high carrier mobility, and tunable optical properties. This multi-functionality eliminates the need for separate impedance matching circuits, reducing device complexity while maintaining reliability
3Ease of manufacture
If conventional semiconductor materials are used for UV LEDs, then manufacturing is simplified, but optical wavelength control efficiency is limited
Solution Approach 1:
The patent changes the optical parameter of bandgap energy by using wide bandgap oxide semiconductors. This enables direct bandgap materials with higher radiative recombination efficiency, improving optical conversion efficiency while maintaining manufacturability through established epitaxial growth techniques
Solution Approach 2:
The patent uses composite oxide semiconductor structures with tailored bandgaps for specific wavelength emission. The composite nature allows optimization of both optical efficiency and manufacturing processes, achieving high productivity without sacrificing ease of manufacture
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
These epitaxial oxide materials and structures enable semiconductor devices to achieve higher breakdown voltages and efficient optical emission across a wide range of wavelengths, simplifying device design and enhancing performance in high-power and optoelectronic applications.
Implementation Method 1
efficient carrier multiplication through impact ionization mechanisms
Implementation Method 2
spatial recombination of charge carriers of electrons and holes to emit light of the required wavelength
Data Source
AI summary
The techniques described herein relate to semiconductor structures, in some cases including epitaxial oxide heterostructures. An epitaxial oxide heterostructure can include a substrate, a first epitaxial oxide layer, and a second epitaxial oxide layer. The first epitaxial oxide layer can include a first epitaxial oxide material, where the first epitaxial oxide material includes: at least one of magnesium, nickel, and zinc; at least one of aluminum and gallium; and oxygen. The second epitaxial oxide layer can include a second epitaxial oxide material, where the second epitaxial oxide material includes: at least one of magnesium, nickel, and zinc; at least one of aluminum and gallium; and oxygen. The first epitaxial oxide material can have a first composition that is different from a second composition of the second epitaxial oxide material.