Oxide Semiconductor Interlayer Insulation for Void-Stable Transistors
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Solution Overview
Problem
The challenge is to stabilize the electrical characteristics of semiconductor devices with interlayer insulating films over transistors using oxide semiconductors, as these films are crucial for insulation and transistor stability.
Innovation Solution
A semiconductor device structure is proposed, featuring a void portion in a first insulating film with silicon oxide, covered by a second insulating film with silicon nitride, which prevents the void portion from expanding and acts as a barrier against hydrogen and water ingress.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If an interlayer insulating film is provided over a transistor including an oxide semiconductor, then insulation between transistor and wiring is improved, but void portions are generated in the insulating film which cause instability in electrical characteristics
Solution Approach 1:
The insulating film is divided into multiple layers: a first insulating film containing silicon oxide and a second insulating film containing silicon nitride. This segmentation allows each layer to perform specific functions - the silicon oxide layer provides insulation while the silicon nitride layer prevents void expansion and hydrogen ingress, thereby resolving the contradiction between maintaining insulation and preventing electrical characteristic instability.
Solution Approach 2:
The patent employs a composite insulating film structure combining silicon oxide and silicon nitride materials. This composite approach leverages the complementary properties of both materials - silicon oxide for insulation and silicon nitride for void control and barrier properties - to simultaneously achieve reliable insulation and stable electrical characteristics.
2Device complexity
If a single-layer insulating film is used to simplify structure, then device complexity is reduced, but void portions expand and degrade transistor performance
Solution Approach 1:
The insulating film is divided into multiple layers: a first insulating film containing silicon oxide and a second insulating film containing silicon nitride. This segmentation allows each layer to perform specific functions - the silicon oxide layer provides insulation while the silicon nitride layer prevents void expansion and hydrogen ingress, thereby resolving the contradiction between maintaining insulation and preventing electrical characteristic instability.
Solution Approach 2:
The patent employs a composite insulating film structure combining silicon oxide and silicon nitride materials. This composite approach leverages the complementary properties of both materials - silicon oxide for insulation and silicon nitride for void control and barrier properties - to simultaneously achieve reliable insulation and stable electrical characteristics.
3Manufacturing precision
If the insulating film completely covers the step portion, then manufacturing precision is improved, but hydrogen and water ingress destabilize electrical characteristics
Solution Approach 1:
The silicon nitride layer acts as an intermediary barrier between the external environment (hydrogen and water) and the transistor. This intermediate layer prevents harmful substances from reaching the transistor through the insulating film, thereby protecting electrical characteristics while maintaining complete coverage for manufacturing precision.
Solution Approach 2:
The patent employs a composite insulating film structure combining silicon oxide and silicon nitride materials. This composite approach leverages the complementary properties of both materials - silicon oxide for insulation and silicon nitride for void control and barrier properties - to simultaneously achieve reliable insulation and stable electrical characteristics.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration effectively suppresses changes in electrical characteristics, enhances the reliability of the semiconductor device, and maintains high integration density while ensuring stable transistor performance.
Implementation Method 1
a second insulating film containing silicon nitride as a component, which is provided in contact with the first insulating film to cover the void portion in the first insulating film
Data Source
AI summary
A change in electrical characteristics of a semiconductor device including an interlayer insulating film over a transistor including an oxide semiconductor as a semiconductor film is suppressed. The structure includes a first insulating film which includes a void portion in a step region formed by a source electrode and a drain electrode over the semiconductor film and contains silicon oxide as a component, and a second insulating film containing silicon nitride, which is provided in contact with the first insulating film to cover the void portion in the first insulating film. The structure can prevent the void portion generated in the first insulating film from expanding outward.