Oxide Interface Layer for Perovskite Solar Cell Stability

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Solution Overview

Problem

The understanding of the fundamental physical and chemical properties of perovskite active layers in halide perovskite solar cells, particularly their interaction with charge transport materials and the impact of interfaces on device efficiency and stability, is limited, necessitating improved insights for better device designs and architectures.

Innovation Solution

The introduction of an oxide interface layer between the perovskite layer and charge transport layers, produced using atomic or molecular layer deposition methods, to enhance the electronic coupling and stability of perovskite solar cells, with specific examples including TiO2, NiO, and ZnO as oxide materials, and the use of ozone-free deposition processes to prevent oxy-iodo species formation.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Device complexity

If charge transport material layers are used directly in contact with perovskite layers, then device architecture is simplified, but interfacial stability and charge carrier extraction are compromised due to oxy-iodo species formation

Engineering Contradiction:
Improvedevice architectureVSAvoidinterfacial stability
Core Design Contradiction:
Device complexityVSReliability

Solution Approach 1:

An oxide interface layer is introduced between the perovskite active layer and the charge transport material layer. This intermediary oxide layer prevents direct contact between the perovskite and CTM, thereby preventing the formation of detrimental oxy-iodo species at the interface while maintaining charge carrier extraction efficiency. The oxide layer acts as a protective mediator that resolves the conflict between architectural simplicity and interfacial stability.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Ease of manufacture

If conventional deposition methods are used to create oxide layers, then manufacturing process is simpler, but oxy-iodo defects are formed that reduce device performance

Engineering Contradiction:
Improvedeposition processVSAvoidinterfacial quality
Core Design Contradiction:
Ease of manufactureVSManufacturing precision

Solution Approach 1:

The oxide interface layer is deposited in an oxygen-free or inert atmosphere environment. This prevents oxidation reactions between oxygen species and iodine at the perovskite interface during the deposition process, thereby avoiding the formation of oxy-iodo defects. The inert environment ensures high interfacial quality while maintaining ease of manufacture through controlled deposition conditions.

Inventive Principle:
Principle #39Inert atmosphere (Inert environment)

3Reliability

If oxide interface layers are introduced between perovskite and charge transport layers, then interfacial stability and charge carrier extraction are improved, but device structure becomes more complex

Engineering Contradiction:
Improveinterfacial stabilityVSAvoidlayer structure
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The oxide interface layer is implemented as a thin film with optimized thickness to provide the necessary protective function while minimizing structural complexity. The thin oxide layer maintains interfacial stability and prevents oxy-iodo species formation without significantly increasing device complexity, as it can be integrated into existing layer architectures with minimal additional processing steps.

Inventive Principle:
Principle #30Flexible shells and thin films

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach leads to improved power conversion efficiency and stability of perovskite solar cells by optimizing the interfacial electronic structure and preventing the formation of oxy-iodo defects, which are detrimental to charge carrier extraction and device performance.

Implementation Method 1

methods for making the same oxy-halogen-free oxide layers on perovskite layers using at least one atomic layer deposition or molecular layer deposition

Methodology Applied
Scientific EffectAtomic layer deposition: Chemical Vapour Deposition

Implementation Method 2

methods for making the same oxy-halogen-free oxide layers on perovskite layers using at least one atomic layer deposition or molecular layer deposition

Methodology Applied
Scientific EffectMolecular layer deposition: Chemical Vapour Deposition

Data Source

PatentUS10879012B2Oxide layers and methods of making the same
Publication Date: 2020.12.29 ALLIANCE FOR ENERGY INNOVATION LLC
  • US10879012B2 patent drawing
  • US10879012B2 patent drawing
  • US10879012B2 patent drawing

AI summary

The present application discloses devices that include a perovskite layer, a first layer that includes an oxide, and an interface layer, where the interface layer is positioned between the first layer and the perovskite layer, the interface layer is in physical contact with both the first layer and the perovskite layer, and the interface layer consists essentially of the oxide.