Oxide Semiconductor Inverter Ring With Back-Gate Temperature Compensation
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing semiconductor devices face challenges with significant variation in transistor characteristics, low on-state current, unfavorable electrical characteristics, difficulty in miniaturization and integration, high power consumption, and instability under varying operating temperatures.
Innovation Solution
A semiconductor device with an odd number of circularly connected inverter circuits, utilizing transistors with oxide semiconductors and back gates, and adjusting voltage to the second back gate based on operating temperature.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional transistors are used in semiconductor devices, then manufacturing is simpler, but transistor characteristic variation is significant and on-state current is low
Solution Approach 1:
The transistor gate is divided into two separate gates (first gate and second gate) that can be independently controlled. This segmentation allows independent optimization of different transistor characteristics, enabling reduced characteristic variation while maintaining manageable manufacturing processes through standardized dual-gate structures.
Solution Approach 2:
The invention changes the electrical parameters by introducing a second gate that can independently control the transistor's electrical characteristics. By adjusting the voltage applied to the second gate, the threshold voltage and on-state current can be optimized, significantly reducing transistor characteristic variation without requiring complex material compositions.
2Productivity
If transistor size is reduced for miniaturization, then integration density increases, but electrical characteristics deteriorate
Solution Approach 1:
The invention transitions from controlling transistor characteristics solely through horizontal scaling to utilizing vertical control dimensions. The dual-gate structure introduces a vertical control dimension where the second gate can independently modulate electrical characteristics, allowing miniaturization without sacrificing electrical performance by compensating through vertical field control.
Solution Approach 2:
By introducing independent voltage control through the second gate, the invention enables dynamic adjustment of electrical parameters such as threshold voltage and channel conductivity. This parameter control mechanism compensates for the electrical characteristic deterioration that normally occurs with reduced transistor dimensions, maintaining reliability while enabling miniaturization.
3Adaptability or versatility
If operating temperature varies, then device adaptability increases, but operational stability decreases
Solution Approach 1:
The dual-gate transistor structure enables feedback-based temperature compensation. The second gate can be used to sense and counteract temperature-induced characteristic shifts by adjusting its voltage to maintain stable transistor operation across varying temperatures, thus improving operational stability while expanding the usable temperature range.
Solution Approach 2:
The invention utilizes the second gate to dynamically change electrical parameters in response to temperature variations. By adjusting the second gate voltage, the transistor's threshold voltage and current characteristics can be compensated for temperature effects, maintaining stable operation across a wide temperature range without sacrificing compositional stability.
Data Source
AI summary
A semiconductor device with a small characteristic variation due to operating temperature is provided. The semiconductor device includes an odd number of stages of inverter circuits that are circularly connected. The inverter circuit includes a first transistor and a second transistor. A gate of the first transistor is electrically connected to one of a source and a drain of the first transistor, the one of the source and the drain of the first transistor is supplied with a high power supply potential, and the other of the source and the drain of the first transistor is electrically connected to an output terminal out. A gate of the second transistor is electrically connected to an input terminal in, one of a source and a drain of the second transistor is electrically connected to the output terminal out, and the other of the source and the drain of the second transistor is supplied with a low power supply potential. The first transistor and the second transistor include an oxide semiconductor in a semiconductor layer. The first transistor and the second transistor each include a back gate.