Oxide Ion Conductor Doping for Low-Temperature SOFCs

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Solution Overview

Problem

Current oxide ion conductors, such as YSZ, have insufficient ion conductivity at intermediate temperatures (300° C. to 500° C.) and are limited by high activation energy, leading to high operating temperatures and material durability issues in electrochemical devices like SOFCs.

Innovation Solution

A novel oxide ion conductor with a X3Z2(TO4)3 structure, where X is a divalent metal, Z is a trivalent metal, and T is a tetravalent metal, exhibiting high ion conductivity through specific element combinations and dopant substitutions, achieving conductivity comparable to YSZ at high temperatures and several times higher at intermediate temperatures.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If YSZ is used as oxide ion conductor, then high ion conductivity is achieved at high temperature (700°C or higher), but operating temperature must be maintained at around 1000°C which causes deterioration of peripheral members and reduces energy utilization efficiency

Engineering Contradiction:
Improveion conductivityVSAvoidoperating temperature
Core Design Contradiction:
ReliabilityVSTemperature

Solution Approach 1:

The invention changes the chemical composition parameters by introducing a multi-element doping system (elements A, B, and C substituting for X, Z, and T respectively) in the X3Z2(TO4)3 structure. This compositional parameter change enables the material to achieve high ion conductivity at lower temperatures by creating additional oxygen vacancies and improving ionic transport pathways, thus resolving the contradiction between maintaining ion conductivity and reducing operating temperature.

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The invention creates a composite doping structure where multiple elements (A, B, C) are incorporated into the base X3Z2(TO4)3 lattice. This composite approach combines the benefits of different elements: element A provides oxygen vacancies for ion conduction, element B enhances structural stability, and element C improves ionic mobility. The synergistic effect of this composite material structure enables low-temperature operation with high ion conductivity.

Inventive Principle:
Principle #40Composite materials

2Temperature

If ScSZ or LaGaO3-based electrolytes are used to lower operating temperature, then operating temperature can be reduced, but strength and redox resistance become insufficient or cost increases

Engineering Contradiction:
Improveoperating temperatureVSAvoidmechanical strength
Core Design Contradiction:
TemperatureVSStrength

Solution Approach 1:

The invention applies local quality enhancement by strategically placing different dopant elements at specific lattice positions. Element A is positioned at the X site to create oxygen vacancies, element B at the Z site to strengthen the lattice, and element C at the T site to optimize local ionic environments. This localized functional assignment maintains mechanical strength while enabling low-temperature operation.

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The invention optimizes the doping concentration parameters (0≤x≤0.2, 0≤y≤0.2, 0≤z≤0.2) to achieve the right balance between ion conductivity and mechanical strength. By controlling the substitution levels of elements A, B, and C, the material maintains structural integrity while achieving the desired low-temperature performance, avoiding the strength issues of ScSZ and LaGaO3.

Inventive Principle:
Principle #35Parameter changes

3Reliability

If higher ion conductivity is achieved through doping, then operating temperature can be reduced, but manufacturing precision and compositional control become more challenging

Engineering Contradiction:
Improveion conductivityVSAvoidcompositional control
Core Design Contradiction:
ReliabilityVSManufacturing precision

Solution Approach 1:

The invention uses partial substitution rather than complete replacement, with doping levels limited to 0≤x≤0.2, 0≤y≤0.2, and 0≤z≤0.2. This partial action approach is more manufacturable than complete substitution, as it allows for broader tolerance ranges while still achieving significant performance improvement. The moderate doping levels make compositional control more feasible in industrial manufacturing.

Inventive Principle:
Principle #16Partial or excessive action

Solution Approach 2:

The invention defines specific parameter ranges for doping concentrations that balance performance and manufacturability. By specifying 0≤x≤0.2, 0≤y≤0.2, and 0≤z≤0.2, the patent creates a design space that is both effective for low-temperature operation and practical for manufacturing. These parameter ranges allow for reasonable process control and quality assurance without requiring extreme precision.

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The oxide ion conductor with the X3Z2(TO4)3 structure allows for reduced operating temperatures in electrochemical devices, expanding material selection, improving performance, reducing costs, and enhancing durability by maintaining high ion conductivity across a broader temperature range.

Implementation Method 1

The term 'oxide ion conductor' refers to a solid material in which oxide ion (O2−) preferentially diffuses

Methodology Applied
Scientific EffectIon diffusion: Diffusion

Implementation Method 2

The oxide ion conductor is used as a solid electrolyte of an electrochemical device such as a solid-oxide fuel cell (SOFC), an oxygen gas sensor, and an exhaust gas purification element using an electrochemical reaction

Methodology Applied
Scientific EffectElectrical conduction: Conduction (electrical)

Data Source

PatentUS11634339B2Oxide ion conductor and electrochemical device
Publication Date: 2023.04.25 KK TOYOTA CHUO KENKYUSHO
  • US11634339B2 patent drawing

AI summary

An oxide ion conductor has a X3Z2(TO4)3 structure, where X is a divalent metal element, Z is a trivalent metal element, and T is a tetravalent metal element, and has a composition expressed by (X1-xAx)3(Z1-yBy)2(T1-zCz)3O12+δ where the element X is Ca, Fe, Gd, Ba, Sr, Mn, and/or Mg, the element Z is Al, Cr, Fe, Mn, V, Ga, Co, Ni, Ru, Rh, and/or Ir, the element T is Si and/or Ge, an element A is La, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, and/or Sr, an element B is Zn, Mn, Co, Ru, and/or Rh, and an element C is Si, Al, Ga, and/or Sn, 0≤x≤0.2, 0≤y≤0.2, and 0≤z≤0.2 are satisfied, and δ is a value securing electrical neutrality.