Oxide Semiconductor Junction Structure for Voltage Blocking and Hole Supply
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Solution Overview
Problem
Current semiconductor devices face challenges in maintaining voltage withstanding properties and semiconductor characteristics, particularly in power devices, due to limitations in band gap control and hole supply layers.
Innovation Solution
The semiconductor device incorporates an n-type oxide semiconductor layer with a first p-type oxide semiconductor layer forming a main junction and a hole supply layer comprising a second p-type oxide semiconductor layer, which has a different composition and band gap, enhancing hole supply and conductivity modulation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a single p type oxide semiconductor layer is used to form the main junction, then the device structure is simple, but the voltage withstanding properties and hole supply are insufficient
Solution Approach 1:
The p type oxide semiconductor layer is divided into two distinct layers: a first p type oxide semiconductor layer forming the main junction with the n type layer, and a second p type oxide semiconductor layer forming the hole supply layer. This segmentation allows each layer to be optimized for its specific function, with the first layer providing voltage withstanding capability and the second layer providing hole supply, thereby resolving the contradiction between reliability and structural simplicity.
Solution Approach 2:
Different regions of the p type semiconductor structure are assigned different properties: the first p type oxide semiconductor layer has properties optimized for junction formation and voltage blocking, while the second p type oxide semiconductor layer has properties optimized for hole supply. This local differentiation of material properties enables simultaneous achievement of high voltage withstanding and effective hole supply without requiring a completely complex multi-layer structure.
2Use of energy by moving object
If materials with smaller band gaps are used, then the device can operate at lower voltages, but the voltage withstanding properties deteriorate
Solution Approach 1:
The invention utilizes parameter changes in the band gap properties of different p type oxide semiconductor materials. By selecting materials with appropriate band gap values for each layer - where the first layer uses materials optimized for voltage blocking and the second layer uses materials optimized for hole supply - the device achieves both low operating voltage and high voltage withstanding capability through controlled variation of material parameters.
Solution Approach 2:
The device employs a composite structure of different p type oxide semiconductor materials with complementary properties. The combination of a first p type oxide semiconductor layer and a second p type oxide semiconductor layer creates a composite system where each material contributes its optimal characteristics, enabling the device to simultaneously achieve low operating voltage and high voltage withstanding properties that neither material could achieve alone.
3Ease of operation
If the hole supply layer is not optimized, then the device structure remains simple, but the ON-state voltage is high and conductivity modulation is poor
Solution Approach 1:
The second p type oxide semiconductor layer is designed in advance as a dedicated hole supply layer with specific material properties optimized for hole generation and injection. This preliminary structuring of the hole supply function separates it from the main junction formation, allowing the hole supply mechanism to be pre-optimized for low ON-state voltage and effective conductivity modulation without complicating the overall device architecture.
Solution Approach 2:
The second p type oxide semiconductor layer acts as an intermediary between the external circuit and the n type oxide semiconductor layer, providing a dedicated pathway for hole supply. This intermediary structure facilitates efficient hole injection and conductivity modulation while maintaining a relatively simple overall device structure, as the intermediary layer handles the complex hole supply function without requiring additional complex components.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration improves the semiconductor device's voltage withstanding properties and reduces ON-state voltage, while maintaining excellent electrical characteristics, even when using materials with smaller band gaps, by effectively modulating conductivity and preventing avalanche breakdown.
Implementation Method 1
a first p type oxide semiconductor layer that forms a main junction with the n type oxide semiconductor layer
Implementation Method 2
a hole supply layer comprising a second p type oxide semiconductor layer, which has a different composition and band gap, enhancing hole supply and conductivity modulation
Implementation Method 3
maintaining excellent electrical characteristics, even when using materials with smaller band gaps, by effectively modulating conductivity and preventing avalanche breakdown
Data Source
AI summary
Provided is a semiconductor device including at least: an n type oxide semiconductor layer; a first p type oxide semiconductor layer that forms a main junction with the n type oxide semiconductor layer, and a hole supply layer, wherein the hole supply layer includes a second p type oxide semiconductor layer that is different from the first p type oxide semiconductor layer.