Oxide-Confined Semiconductor Laser Ridge Structure for Lower Loss
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Solution Overview
Problem
Traditional semiconductor lasers face challenges such as high light loss and series resistance due to the P-type epitaxial layer, and the fabrication process involves complex steps like secondary photolithography and insulating material growth, which can introduce defects and reduce performance.
Innovation Solution
The oxide-confined semiconductor laser with high aluminum content features a P-type high aluminum content layer and an oxidation confinement layer, which reduces light loss and series resistance by enhancing light field confinement and simplifying the fabrication process by eliminating the need for secondary photolithography and additional insulating material growth.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of energy
If the thickness of P-type waveguide layer is reduced to reduce light loss and resistance, then light loss and resistance are reduced, but confinement factor decreases and light field leaks to contact layer
Solution Approach 1:
The patent employs a composite structure combining P-type waveguide layer with high aluminum content layer (AlxGaAs where 0.8≤x≤1). This composite material approach allows the P-type waveguide layer to be thinner while the high aluminum content layer provides additional optical confinement through its higher refractive index, preventing light field leakage to the contact layer while maintaining reduced light loss and resistance.
2Reliability
If traditional fabrication process with secondary photolithography and insulating material growth is used, then electrical isolation is achieved, but defects such as pores and stresses are introduced
Solution Approach 1:
The patent extracts and eliminates the traditional secondary photolithography and insulating material growth steps from the fabrication process. Instead, electrical isolation is achieved through the oxidation of the high aluminum content layer to form an oxide confinement layer, which inherently provides both electrical isolation and optical confinement without introducing defects such as pores and interface stresses.
3Manufacturing precision
If insulating layer thickness is increased to ensure good sidewall coverage, then sidewall coverage is improved, but heat dissipation characteristics deteriorate
Solution Approach 1:
The patent changes the material composition parameter by using high aluminum content layer (AlxGaAs where 0.8≤x≤1) that can be oxidized to form the confinement layer. This oxidation process creates electrical isolation and sidewall coverage without requiring thick insulating layers, thereby maintaining good heat dissipation characteristics while achieving adequate sidewall coverage.
4Reliability
If secondary photolithography is used to form electrical injection window, then electrical isolation is achieved, but contamination is introduced and failure rate increases
Solution Approach 1:
The patent merges the functions of electrical isolation and optical confinement into a single oxide confinement layer formed by oxidizing the high aluminum content layer. This eliminates the need for separate secondary photolithography and insulating material growth steps, reducing fabrication complexity and avoiding contamination while maintaining reliable electrical isolation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design achieves reduced internal loss, lower series resistance, improved heat dissipation, and enhanced power and efficiency of the semiconductor laser, while also simplifying the fabrication process and reducing production costs.
Implementation Method 1
the P-type high aluminum content layer 8 is oxidized to form an oxidation confinement layer 81
Data Source
AI summary
The present disclosure provides an oxide-confined semiconductor laser having high aluminum content and a fabricating method. The semiconductor laser includes: an N-side metal electrode, an N-type GaAs substrate, an N-type confinement layer, an N-type waveguide layer, an active region, a P-type waveguide layer, a P-type confinement layer, a P-type high aluminum content layer, a P-type contact layer, and a P-side metal electrode. The P-type high aluminum content layer and the P-type contact layer are etched to form a ridge structure. The P-type high aluminum content layer is oxidized to form an oxidation confinement layer. The oxidation confinement layer is between an upper surface of the P-type confinement layer and a lower surface of the P-type contact layer, and covers both sides of the ridge structure, so as to form a current injection channel below the ridge structure and an electrical isolation on the both sides of the ridge structure.