Oxide Layer Formation in 3D Semiconductor Vertical Structures
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Solution Overview
Problem
Conventional three-dimensional semiconductor devices face challenges in reliable and economical manufacturing due to limitations in current process technology, limiting their integration density and performance.
Innovation Solution
A method of manufacturing three-dimensional semiconductor memory devices involves forming a thin layer structure, creating penetration dents, and forming vertical insulation and semiconductor patterns to enhance mechanical stability and current flow, including the use of oxide layers and stacked electrodes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If three-dimensional semiconductor devices are manufactured using conventional process technology, then integration density can be increased beyond planar limits, but manufacturing reliability and economic feasibility deteriorate due to process technology limits
Solution Approach 1:
The patent applies preliminary action by forming an oxide layer at the bottom of penetration dents before forming the vertical channel structure. This preliminary oxide layer formation prevents direct contact between the vertical channel and the substrate, avoiding manufacturing defects and improving reliability while enabling higher integration density through vertical stacking
2Quantity of substance
If three-dimensional semiconductor devices are manufactured using conventional process technology, then integration density can be increased beyond planar limits, but manufacturing cost increases due to prohibitively expensive process technology requirements
Solution Approach 1:
The patent applies self-service by utilizing the substrate's own material to form the oxide layer through oxidation processes. This eliminates the need for additional deposited oxide layers, reducing manufacturing complexity and cost while achieving the required insulation and mechanical stability for high-density vertical structures
3Quantity of substance
If vertical structures are formed in three-dimensional semiconductor devices, then storage capacity and performance are improved, but mechanical stability deteriorates without proper support structures
Solution Approach 1:
The patent applies the intermediary principle by introducing an oxide layer as a mediator between the vertical channel structure and the substrate. This oxide layer provides mechanical support and stability to the vertical structures, preventing collapse or deformation while maintaining the high storage capacity enabled by the vertical architecture
4Quantity of substance
If vertical structures are formed in three-dimensional semiconductor devices, then current flow and performance are improved, but device reliability deteriorates without proper insulation and isolation structures
Solution Approach 1:
The patent applies the intermediary principle by introducing an oxide layer as a mediator between the vertical channel structure and the substrate. This oxide layer provides mechanical support and stability to the vertical structures, preventing collapse or deformation while maintaining the high storage capacity enabled by the vertical architecture
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach improves the mechanical stability and current flow in three-dimensional semiconductor memory devices, addressing the limitations of conventional manufacturing methods and enhancing performance.
Implementation Method 1
forming an oxide layer between the thin layer structure and the substrate by oxidizing a sidewall of the penetration dent
Data Source
AI summary
A method of manufacturing a three-dimensional semiconductor memory device comprises forming a thin layer structure by alternately stacking first and second material layers on a substrate, forming a penetration dent penetrating the thin layer structure and exposing a top surface of the substrate recessed by the penetration dent, forming a vertical insulation layer penetrating the thin layer structure to cover an inner wall of the penetration dent, forming a semiconductor pattern penetrating the vertical insulation layer at the penetration dent to be inserted into the substrate, and forming an oxide layer between the thin layer structure and the substrate by oxidizing a sidewall of the penetration dent.