Oxide Semiconductor Layer Structure for Oxygen Defect Repair
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Solution Overview
Problem
Semiconductor devices with oxide semiconductor channels face challenges in maintaining high mobility and reliability due to oxygen deficiencies, which are exacerbated by high indium ratios and non-uniform oxygen distribution across the semiconductor layer, leading to variations in characteristics and decreased field-effect mobility.
Innovation Solution
A semiconductor device configuration featuring a metal oxide layer over an insulating surface with an oxide semiconductor layer, where the insulating layer has a specific aluminum concentration and a metal oxide layer is used to block hydrogen and oxygen, allowing for targeted oxygen supply to the oxide semiconductor layer during annealing to repair deficiencies and reduce defects.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If a high indium ratio is used in the oxide semiconductor layer to achieve high mobility, then field-effect mobility is improved, but oxygen deficiencies increase leading to decreased reliability
Solution Approach 1:
The patent applies local quality by creating a non-uniform aluminum concentration distribution within the insulating layer. The first region (closer to the oxide semiconductor layer) has a higher aluminum concentration (≥1×10^17 atoms/cm³) compared to the second region, enabling localized oxygen supply precisely where needed in the high-indium oxide semiconductor layer without uniformly affecting the entire structure.
Solution Approach 2:
The patent changes the chemical composition parameter by introducing aluminum into the insulating layer at specific concentrations. This parameter change enables the insulating layer to serve dual functions: maintaining electrical insulation while providing oxygen to repair deficiencies in the oxide semiconductor layer, thereby resolving the reliability issue without sacrificing mobility.
2Reliability
If uniform oxygen distribution is attempted across the oxide semiconductor layer, then oxygen supply is improved, but non-uniform characteristics persist due to varying oxygen demand across different regions
Solution Approach 1:
The patent implements local quality through spatially varying aluminum concentration in the insulating layer. The first region with higher aluminum concentration is positioned to supply oxygen to areas of the oxide semiconductor layer that require it most, while the second region with lower concentration prevents over-supply to areas that already have sufficient oxygen, thereby achieving both sufficient oxygen supply and characteristic uniformity.
3Reliability
If an insulating layer with high oxygen content is used to supply oxygen to the oxide semiconductor layer, then oxygen supply is improved, but hydrogen blocking capability decreases
Solution Approach 1:
The patent changes the compositional parameter of the insulating layer by incorporating aluminum at controlled concentrations. This modification enables the layer to simultaneously provide oxygen (improving reliability) and block hydrogen (reducing harmful factors), resolving the contradiction between these two previously opposing requirements.
Solution Approach 2:
The patent creates a composite insulating layer that combines materials with different properties - one component provides oxygen supply capability while another component provides hydrogen blocking capability. This composite structure allows the single insulating layer to fulfill multiple protective and functional roles that previously required separate layers.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution achieves high mobility and reliability by ensuring sufficient oxygen supply to the oxide semiconductor layer, reducing oxygen deficiencies and defects, thereby stabilizing the device's characteristics and maintaining performance across different regions.
Implementation Method 1
a metal oxide layer is used to block hydrogen and oxygen
Implementation Method 2
allowing for targeted oxygen supply to the oxide semiconductor layer during annealing to repair deficiencies and reduce defects
Data Source
AI summary
A semiconductor device includes a metal oxide layer over an insulating surface, an oxide semiconductor layer over the metal oxide layer, and an insulating layer over the oxide semiconductor. The insulating layer includes a first region overlapping the oxide semiconductor layer. A first aluminum concentration of the first region is greater than or equal to 1×1017 atoms/cm3.