Oxide Semiconductor Layer Deposition for Low Oxygen Vacancies
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
As semiconductor devices become smaller, small defects significantly impact their performance and characteristics, necessitating improved methods to enhance electrical characteristics.
Innovation Solution
A method involving the sequential adsorption of multiple precursors and reactants on a substrate to form oxide semiconductor layers, with specific elements and oxygen, distributing precursors with high oxygen affinity to reduce oxygen vacancies.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If element distribution is improved to reduce oxygen vacancies, then electrical characteristics are improved, but manufacturing process complexity increases
Solution Approach 1:
The manufacturing process is segmented into multiple sequential steps: first providing a precursor containing multiple elements, then providing a separate reactant (oxygen) to form the oxide semiconductor layer. This segmentation allows independent optimization of element distribution and oxygen incorporation, improving electrical characteristics while maintaining manageable process complexity through systematic division of steps.
Solution Approach 2:
The precursor is provided in advance with specific element composition and distribution before the oxygen reactant is introduced. This preliminary action of pre-positioning elements in the desired spatial distribution allows subsequent oxygen incorporation to proceed efficiently, reducing oxygen vacancies and improving carrier mobility without requiring complex real-time control during the oxidation step.
2Reliability
If carrier mobility is improved through better element distribution, then device performance is enhanced, but manufacturing precision requirements increase
Solution Approach 1:
The method changes the chemical state and reactivity parameters of the precursor materials to enhance their adsorption characteristics. By selecting precursors with high oxygen affinity and appropriate reactivity, the system achieves improved element distribution and oxygen incorporation without requiring extremely tight control over deposition parameters, thus improving carrier mobility while moderating manufacturing precision requirements.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach improves carrier mobility and threshold voltage characteristics, resulting in semiconductor devices with enhanced electrical performance.
Implementation Method 1
providing a first precursor on a substrate to adsorb a first element of the first precursor onto a first region of the substrate
Data Source
AI summary
A method of manufacturing a semiconductor device including providing a first precursor on a substrate to adsorb a first element of the first precursor onto a first region of the substrate, providing a second precursor on the substrate to adsorb a second element of the second precursor onto a second region of the substrate, the second region being different from the first region, and providing a reactant including oxygen on the substrate to form an oxide semiconductor layer including the first element of the first precursor, the second element of the second precursor, and the oxygen of the reactant may be provided.