Metal Oxide Layered Structure for RDL Adhesion Under Fine Pitch
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Solution Overview
Problem
The semiconductor industry faces challenges in achieving strong adhesion between metallization and dielectric layers in semiconductor devices, which can lead to delamination issues, especially as feature sizes decrease and integration density increases.
Innovation Solution
A metal oxide layered structure with a 1:1 ratio of metal to oxygen atoms is formed on the metallization pattern, either directly or after native oxide formation, to enhance adhesion between the metallization and dielectric layers, with a thickness of at least 50 Å, using processes like oxygen-containing plasma treatment.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If feature size is reduced to increase integration density, then more components can be integrated into a given area, but adhesion between metallization and dielectric layers deteriorates leading to delamination
Solution Approach 1:
A metal oxide intermediate layer is introduced between the metallization layer and the dielectric layer to serve as an adhesion promoter. This intermediate layer chemically bonds to both the metal and the dielectric material, preventing delamination while allowing continued miniaturization of device features to maintain high integration density.
Solution Approach 2:
The adhesion problem is resolved by changing the chemical composition and oxidation state of the metallization layer surface. By controlling the oxidation parameters (oxygen exposure, temperature, duration), the metal surface is transformed into a metal oxide layer with enhanced adhesion properties, enabling reliable bonding at reduced feature sizes.
2Reliability
If a metal oxide layer is formed to improve adhesion, then delamination is reduced, but the manufacturing process complexity increases
Solution Approach 1:
The metal oxide adhesion layer is formed as a preliminary step before dielectric layer deposition. By performing the oxidation treatment on the metallization layer in advance, the adhesion promoter is prepared beforehand, ensuring reliable bonding without requiring additional complex processing steps during subsequent manufacturing operations.
Solution Approach 2:
Oxygen plasma or other strong oxidizing environments are used to rapidly form the metal oxide layer in a controlled manner. This accelerated oxidation process creates the adhesion-promoting metal oxide layer efficiently, reducing processing time and simplifying the overall manufacturing sequence while maintaining high adhesion strength.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach improves adhesion between metallization and dielectric layers, reducing the risk of delamination and supporting the integration of more components in smaller areas, thus enhancing the reliability and performance of semiconductor devices.
Implementation Method 1
using processes like oxygen-containing plasma treatment
Implementation Method 2
treating the metallization pattern with an oxygen-containing plasma, the treating forming a metal oxide layer
Data Source
AI summary
Some embodiment structures and methods are described. A structure includes an integrated circuit die at least laterally encapsulated by an encapsulant, and a redistribution structure on the integrated circuit die and encapsulant. The redistribution structure is electrically coupled to the integrated circuit die. The redistribution structure includes a first dielectric layer on at least the encapsulant, a metallization pattern on the first dielectric layer, a metal oxide layered structure on the metallization pattern, and a second dielectric layer on the first dielectric layer and the metallization pattern. The metal oxide layered structure includes a metal oxide layer having a ratio of metal atoms to oxygen atoms that is substantially 1:1, and a thickness of the metal oxide layered structure is at least 50 Å. The second dielectric layer is a photo-sensitive material. The metal oxide layered structure is disposed between the metallization pattern and the second dielectric layer.