Semiconductor Oxide Layer Refinement via Vacuum Thermal Treatment
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Solution Overview
Problem
Conventional semiconductor device passivation methods result in oxide layers with high defect densities and often require high processing temperatures, which can deteriorate semiconductor substrates and structures.
Innovation Solution
A method involving refining a semiconductor structure with a semiconductor layer and an oxide layer in a vacuum chamber, maintaining a refinement temperature between 20°C and 800°C and a total pressure below 1×10−3 mbar for at least 25 seconds, to reduce defect states and enhance oxide layer crystallinity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional methods are used to form oxide layers for passivation, then the oxide layer can be formed, but the oxide layer will have high defect densities that deteriorate semiconductor device performance
Solution Approach 1:
The patent applies parameter changes by modifying the physical and chemical conditions during oxide layer formation and treatment. Specifically, it uses low-pressure oxygen environment (1-100 mbar) combined with controlled temperature ranges (200-800°C) and extended treatment times (1-60 minutes) to transform the oxide layer structure, reduce defect densities, and improve crystallinity, thereby resolving the contradiction between forming oxide layers and achieving low defect densities
Solution Approach 2:
The patent employs an inert oxygen atmosphere at controlled low pressures (1-100 mbar) during the oxide layer treatment process. This controlled atmospheric environment prevents additional defect formation while enabling the refinement of existing oxide structures, addressing the contradiction by providing a clean environment that maintains oxide layer integrity while reducing defects
2Manufacturing precision
If high processing temperatures are used to form oxide layers, then oxide formation can be achieved, but the semiconductor substrates and structures will deteriorate
Solution Approach 1:
The patent resolves this contradiction by changing the temperature parameter from conventional high-temperature rapid oxidation to a controlled range of 200-800°C with extended treatment times. This parameter transformation allows sufficient oxide layer refinement and defect reduction while preventing substrate damage that would occur at higher temperatures
Solution Approach 2:
The patent applies periodic action through extended treatment durations (1-60 minutes) at moderate temperatures. This prolonged exposure to controlled oxygen pressure and temperature conditions enables gradual oxide layer improvement without the thermal shock and damage associated with rapid high-temperature processing, thus resolving the contradiction between oxide quality and substrate integrity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively lowers defect densities at the semiconductor-oxide interface and increases the degree of crystallinity of the oxide layer, improving semiconductor device performance.
Implementation Method 1
maintaining total pressure (ptot) in the vacuum chamber below a maximum total pressure (ptotmax) of 1×10−3 millibars (mbar)
Implementation Method 2
maintaining temperature (T) of the semiconductor structure within a refinement temperature range (ΔT) extending from 20 degrees Celsius (° C.) to 800° C.
Implementation Method 3
refining the oxide layer by maintaining temperature (T) of the semiconductor structure within a refinement temperature range (ΔT)
Data Source
AI summary
This disclosure relates to a method (100) for passivating a semiconductor structure, comprising a semiconductor layer and an oxide layer on the semiconductor layer; a semiconductor structure; and a vacuum processing system. The method (100) comprises providing the semiconductor structure (110) in a vacuum chamber (310) and, while keeping the semiconductor structure in the vacuum chamber (120) throughout a refinement period with a duration of at least 25 s refining the oxide layer (130) by maintaining temperature (131) of the semiconductor structure within a refinement temperature range extending from 20° C., to 800° C., and maintaining total pressure (132) in the vacuum chamber below a maximum total pressure, of 1×10−3 mbar.