Oxide Semiconductor Layer Formation Using a Sacrificial Gate Opening
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Solution Overview
Problem
Existing semiconductor devices face challenges in maintaining the quality and reliability of oxide semiconductor layers due to damage during manufacturing processes, particularly when the oxide semiconductor layer is formed after the gate electrode, leading to deviations from specified characteristics.
Innovation Solution
The method involves forming the gate electrode first, surrounding a sacrificial layer, and then removing it to create a hole for the oxide semiconductor layer, ensuring the oxide semiconductor layer is formed within the defined region, thereby reducing damage and improving its quality and reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the oxide semiconductor layer is formed after the gate electrode, then the manufacturing process can be completed, but the oxide semiconductor layer suffers damage and quality degradation
Solution Approach 1:
The gate electrode is formed first as a preliminary structure before forming the oxide semiconductor layer. This preliminary action establishes the gate structure in advance, allowing subsequent processes to be optimized for the oxide semiconductor layer formation without compromising its quality.
Solution Approach 2:
A sacrificial layer is introduced as an intermediary element between the gate electrode and the oxide semiconductor layer. This sacrificial layer protects the oxide semiconductor layer from damage during manufacturing processes, and is subsequently removed to complete the structure.
2Device complexity
If the oxide semiconductor layer is formed after the gate electrode, then the device structure can be built, but defects increase and specifications deviate
Solution Approach 1:
The gate electrode and sacrificial layer are formed in advance as preliminary structures. This preliminary construction establishes a protective framework that enables precise formation of the oxide semiconductor layer with controlled thickness and composition, maintaining manufacturing precision.
Solution Approach 2:
The sacrificial layer serves as an intermediary that defines the precise region where the oxide semiconductor layer will be formed. It acts as a template that ensures the oxide semiconductor layer is deposited only in the desired area with accurate dimensional control.
3Ease of operation
If the oxide semiconductor layer is formed after the gate electrode, then the transistor can be assembled, but the interface quality between layers deteriorates
Solution Approach 1:
The sacrificial layer acts as a protective intermediary during the assembly process. It shields the oxide semiconductor layer from mechanical damage and contamination that would otherwise occur during transistor assembly operations, preserving interface quality.
Solution Approach 2:
The sacrificial layer provides beforehand cushioning and protection to the oxide semiconductor layer during the assembly process. This protective measure is in place before any potential damage can occur, ensuring the interface quality is maintained throughout assembly.
Data Source
AI summary
The present disclosure provides a semiconductor device and a method of manufacturing a semiconductor device. The semiconductor device includes a drain electrode, a first oxide semiconductor layer, and a gate dielectric layer. The first oxide semiconductor layer is disposed below the drain electrode and has a first surface in contact with the drain electrode. The gate dielectric layer is disposed below the drain electrode and has a second surface in contact with the drain electrode. A first elevation of the first surface is higher than or identical to a second elevation of the second surface.