Oxide-Isolated Memory Decks for Charge-Trap-Free 3D Scaling
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Solution Overview
Problem
As the feature size of memory cells in non-volatile memory devices decreases, the thickness of tunnel dielectric materials also decreases, leading to increased risk of failure and charge leakage, while conventional vertical memory arrays face challenges in achieving higher memory densities without charge trapping issues.
Innovation Solution
The use of microelectronic devices with decks of alternating insulative and conductive materials, where memory strings extend through these decks and include an oxide material that does not exhibit charge trapping characteristics, effectively decoupling adjacent pillars and reducing charge interactions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the feature size of memory cells is reduced to increase memory density, then the number of memory cells per die increases, but the thickness of tunnel dielectric material decreases leading to increased risk of failure and charge leakage
Solution Approach 1:
An oxide material layer is introduced between adjacent pillars as an intermediary structure. This oxide material does not exhibit charge trapping characteristics and serves to decouple adjacent pillars, preventing charge leakage while maintaining the reduced feature size necessary for high memory density
Solution Approach 2:
The oxide material is selectively placed in specific locations between adjacent pillars rather than throughout the entire structure. This local application provides charge isolation where needed while preserving the overall high-density architecture
2Productivity
If conventional vertical memory array architectures are used to increase memory density, then more memory cells can be packed vertically, but charge trapping issues arise that limit further density increases
Solution Approach 1:
The oxide material acts as a mediator between adjacent pillars, blocking charge trapping that would otherwise occur at interfaces between different materials. This enables continued scaling to higher memory densities without the charge trapping limitations that plague conventional vertical architectures
Solution Approach 2:
The structure utilizes a composite material approach by combining the tunnel dielectric material with an oxide material layer that has complementary properties (no charge trapping). This composite structure leverages the strengths of each material to achieve both high density and reliability
Data Source
AI summary
A microelectronic device includes decks comprising alternating levels of a conductive material and an insulative material, the decks comprising pillars including a channel material extending through the alternating levels of the conductive material and the insulative material, a conductive contact between adjacent decks and in electrical communication with the channel material of the adjacent decks, and an oxide material between the adjacent decks, the oxide material extending between an uppermost level of a first deck and a lowermost level of a second deck adjacent to the first deck. Related electronic systems and methods of forming the microelectronic device and electronic systems are also disclosed.