Oxide Semiconductor Memory Structure With Hydrogen-Trapping Insulators
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Solution Overview
Problem
Existing semiconductor devices face challenges in achieving favorable electrical characteristics, specifically in having normally-off electrical characteristics, high on-state current, high frequency characteristics, and high reliability, while also being miniaturized or highly integrated and manufactured with high productivity.
Innovation Solution
A semiconductor device is designed with an oxide semiconductor, a first insulator containing excess oxygen, and a second insulator with a function to trap or fix hydrogen. The excess oxygen in the first insulator bonds with hydrogen from the oxide semiconductor, which is then trapped in the second insulator, reducing hydrogen concentration and improving device reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a transistor is formed using a semiconductor thin film over a substrate, then the device can be applied to integrated circuits and display devices, but achieving favorable electrical characteristics including normally-off operation and high on-state current remains challenging
Solution Approach 1:
The device is divided into distinct functional layers: an oxide semiconductor layer for the active channel, a gate insulator layer for control, and source/drain electrodes. This segmentation allows each layer to be optimized independently for its specific function, achieving favorable electrical characteristics while maintaining manageable structural complexity.
Solution Approach 2:
The patent utilizes phase transitions and crystallization of the oxide semiconductor material to change its electrical properties. By controlling the crystalline state and composition parameters of the oxide semiconductor, the device achieves normally-off characteristics and high on-state current without requiring complex additional structures.
2Productivity
If the device is miniaturized or highly integrated to meet demand for higher density, then productivity and integration are improved, but maintaining favorable electrical characteristics becomes more difficult
Solution Approach 1:
The oxide semiconductor material allows for scaling to smaller dimensions while maintaining electrical characteristics through controlled composition and crystalline structure. The material parameters can be adjusted to ensure consistent performance across different device sizes and integration densities.
Solution Approach 2:
The device employs a composite structure combining oxide semiconductor with conventional semiconductor materials and insulators. This composite approach enables high integration density while maintaining the favorable electrical characteristics of the oxide semiconductor through proper material selection and interface engineering.
3Reliability
If existing semiconductor structures are used, then manufacturing processes are established, but achieving normally-off electrical characteristics and high frequency performance simultaneously is difficult
Solution Approach 1:
By controlling the composition, thickness, and crystalline structure parameters of the oxide semiconductor layer, the device achieves high frequency characteristics. These parameter optimizations can be implemented within existing manufacturing frameworks through sputtering or other thin-film deposition techniques.
Solution Approach 2:
The gate insulator layer serves as an intermediary between the oxide semiconductor channel and the gate electrode, enabling effective electrical control. This intermediate layer allows for normally-off operation while maintaining compatibility with standard semiconductor manufacturing processes used for creating insulated gate structures.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The semiconductor device achieves favorable electrical characteristics, including normally-off operation, high on-state current, and high frequency performance, while ensuring high reliability and productivity in manufacturing.
Implementation Method 1
Hydrogen in the oxide semiconductor is bonded to the excess oxygen
Implementation Method 2
The second insulator has a function of trapping or fixing hydrogen
Data Source
AI summary
A semiconductor device having favorable electrical characteristics is provided. The semiconductor device includes an oxide semiconductor, a first insulator in contact with the oxide semiconductor, and a second insulator in contact with the first insulator. The first insulator includes excess oxygen. The second insulator has a function of trapping or fixing hydrogen. Hydrogen in the oxide semiconductor is bonded to the excess oxygen. The hydrogen bonded to the excess oxygen passes through the first insulator and is trapped or fixed in the second insulator. The excess oxygen bonded to the hydrogen remains in the first insulator as the excess oxygen.