Oxide Semiconductor Memory Electrode Protection Against Oxygen Diffusion
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Solution Overview
Problem
The reliability of semiconductor memory devices is compromised due to oxygen diffusion and oxidation issues affecting the conductive oxide and metal layers, leading to operational failures and reduced storage duration of data.
Innovation Solution
Incorporating protective films with lower oxygen diffusion coefficients than the conductive layers, these films prevent oxygen release from the oxide semiconductor layer and oxidation of the conductive layers, thereby enhancing the reliability and longevity of the semiconductor memory device.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conductive oxide layers are used in semiconductor memory devices, then electrical conductivity is improved, but oxidation and oxidation-related failures occur leading to reduced reliability
Solution Approach 1:
The patent introduces protective films as intermediary layers between the conductive oxide layers and the surrounding environment. These protective films act as mediators that prevent direct contact between oxygen and the conductive oxide, thereby eliminating oxidation while maintaining the electrical conductivity function of the conductive oxide layers.
Solution Approach 2:
The patent employs composite material structures combining conductive oxide layers with protective films. This composite approach integrates the electrical conductivity property of conductive oxides with the oxidation resistance property of protective films, achieving both functional requirements simultaneously.
2Reliability
If protective films are added to prevent oxidation, then reliability is improved, but device complexity increases
Solution Approach 1:
The patent utilizes thin film protective layers that provide effective oxidation protection without adding significant structural complexity. The protective films are deposited as thin layers on the conductive oxide surfaces, maintaining a planar structure and avoiding complex three-dimensional configurations while effectively preventing oxygen diffusion.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The use of protective films effectively reduces oxidation and oxygen diffusion, improving the reliability and extending the data storage capabilities of the semiconductor memory device by minimizing operational failures.
Implementation Method 1
The first protective film and the second protective film each contain a material having an oxygen diffusion coefficient smaller than that of the second conductive layer
Data Source
AI summary
A semiconductor device includes: an oxide semiconductor layer extending in a first direction; a gate electrode overlapping the oxide semiconductor layer in a second direction intersecting the first direction; a gate insulating film provided between the gate electrode and the oxide semiconductor layer; a first conductive layer provided on the oxide semiconductor layer in the first direction and containing a conductive oxide; a second conductive layer provided on the first conductive layer in the first direction and containing a metal element; a first protective film in contact with a side surface of the second conductive layer; and a second protective film in contact with at least a part of a side surface or an upper surface of the first conductive layer. The first protective film and the second protective film each contain a material having an oxygen diffusion coefficient smaller than that of the second conductive layer.