Oxide Semiconductor Memory for Non-Volatile Reconfigurable Circuits
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Solution Overview
Problem
Existing semiconductor devices struggle to maintain the connection relation between logic circuit units or the circuit configuration of each logic circuit unit for a long time after power supply voltage is stopped, while also achieving high-speed operation and low power consumption.
Innovation Solution
A semiconductor device is developed that includes a storage circuit with a semiconductor element featuring an oxide semiconductor, allowing for the maintenance of circuit configurations and connection relations between logic circuit units even after power is turned off, while enabling high-speed operation and low power consumption.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If SRAM or DRAM is used as the storage circuit, then the connection relation between logic circuit units or the circuit configuration can be changed at high speed, but stored data is lost when supply of power supply voltage is stopped
Solution Approach 1:
The patent changes the physical state parameter of the storage circuit from volatile (SRAM/DRAM) to non-volatile by introducing oxide semiconductor memory cells, which maintain data without power while enabling fast reconfiguration through programmable logic elements
2Reliability
If flash memory is used as the storage circuit, then data can be maintained after supply of power supply voltage is stopped, but it is difficult to achieve high-speed operation and reduce power consumption because the drive voltage of flash memory is high
Solution Approach 1:
The patent changes the voltage parameter by using oxide semiconductor memory cells that operate at lower voltages compared to flash memory, thereby reducing power consumption while maintaining non-volatile data storage capability
Solution Approach 2:
The patent employs a composite architecture combining oxide semiconductor memory cells with programmable logic circuit units, creating a hybrid system that achieves both low power consumption and high-speed reconfiguration capability
3Reliability
If flash memory is used as the storage circuit, then data can be maintained after supply of power supply voltage is stopped, but it is difficult to achieve high-speed operation because the drive voltage of flash memory is high
Solution Approach 1:
The patent changes the voltage parameter to lower operating levels using oxide semiconductor memory cells, which enables faster switching speeds and higher operation frequencies while maintaining non-volatile data storage
Data Source
AI summary
An object is to provide a semiconductor device that can maintain the connection relation between logic circuit units or the circuit configuration of each of the logic circuit units even after supply of power supply voltage is stopped. Another object is to provide a semiconductor device in which the connection relation between logic circuit units or the circuit configuration of each of the logic circuit units can be changed at high speed. In a reconfigurable circuit, an oxide semiconductor is used for a semiconductor element that stores data on the circuit configuration, connection relation, or the like. Specifically, the oxide semiconductor is used for a channel formation region of the semiconductor element.