Oxide Memory Tunnel Barrier Segmentation for Ion Retention
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Solution Overview
Problem
Oxide-based memory devices face challenges in reliably maintaining 'on' or 'off' states due to poor retention of oxygen ions in the tunnel barrier, requiring either high current for retention or easy movement, which affects their reliability and efficiency in write and erase operations.
Innovation Solution
A method of forming an oxide-based memory cell with a tunnel barrier composed of alternating materials, where one material has higher activation energy for oxygen ion diffusion to retain ions and the other has lower activation energy for easy transfer, allowing controlled current and voltage for oxygen ion movement and retention.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If oxygen ions are retained in the tunnel barrier, then the memory device can maintain its state reliably, but it becomes more difficult to move oxygen ions to the tunnel barrier requiring more current
Solution Approach 1:
The tunnel barrier is divided into multiple segments with different materials having different oxygen ion diffusion characteristics. Some segments facilitate oxygen ion movement during write operations while other segments provide strong retention, resolving the contradiction between ease of ion movement and retention reliability.
Solution Approach 2:
Different regions of the tunnel barrier are assigned different local properties through using materials with varying activation energies for oxygen ion diffusion. This allows specific regions to optimize for either ion movement or ion retention, eliminating the need to choose between the two opposing requirements.
2Use of energy by moving object
If oxygen ions move easily to the tunnel barrier requiring less current, then write operations are more efficient, but the memory device may not satisfactorily retain the oxygen ions in the tunnel barrier
Solution Approach 1:
The tunnel barrier is segmented into regions with different materials optimized for specific functions: some segments provide low activation energy for easy ion movement during write operations, while other segments provide high activation energy for reliable ion retention, thus resolving the contradiction between write efficiency and state maintenance reliability.
Solution Approach 2:
Different local regions of the tunnel barrier possess different material properties tailored to their specific roles. Regions closer to the oxygen source use materials facilitating ion movement, while regions deeper in the barrier use materials providing strong retention, thereby achieving both low write current and high retention reliability simultaneously.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces the current required for write and erase operations, enhances the reliability of maintaining resistive states, and improves the memory device's ability to switch between 'on' and 'off' states while retaining oxygen ions effectively.
Implementation Method 1
one material has higher activation energy for oxygen ion diffusion to retain ions and the other has lower activation energy for easy transfer
Data Source
AI summary
Methods, devices, and systems associated with oxide based memory are described herein. In one or more embodiments, a method of forming an oxide based memory cell includes forming a first electrode, forming a tunnel barrier, wherein a first portion of the tunnel barrier includes a first material and a second portion of the tunnel barrier includes a second material, forming an oxygen source, and forming a second electrode.