3D Oxide Semiconductor NAND Memory Structure for High-Capacity Reliability
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Solution Overview
Problem
Existing memory devices face challenges in achieving high reliability and large memory capacity while maintaining miniaturization and low power consumption.
Innovation Solution
A semiconductor device with a NAND-type memory structure incorporating oxide semiconductors, featuring transistors and capacitors at intersection points, allowing for efficient data writing and reading, and utilizing indium and zinc in the oxide semiconductor for enhanced performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If memory capacity is increased to handle larger data amounts, then storage capability is improved, but device size and power consumption increase
Solution Approach 1:
The patent transitions from planar 2D memory architecture to three-dimensional stacked memory structure, where memory cells are arranged vertically across multiple layers. This dimensional change enables significantly increased storage capacity within the same footprint area, directly resolving the contradiction between memory capacity and device size.
Solution Approach 2:
The patent implements nested functional structures where conductive layers, insulating layers, and semiconductor layers are stacked and interleaved in a compact configuration. Each layer nestles within the vertical space defined by adjacent layers, maximizing space utilization and enabling high density without proportionally increasing device volume.
2Quantity of substance
If conventional memory structures are used to increase capacity, then storage is improved, but reliability and performance are compromised
Solution Approach 1:
The patent changes the material parameter by using oxide semiconductor materials (such as IGZO - indium gallium zinc oxide) for the semiconductor layers instead of conventional silicon-based materials. This material parameter change provides superior electrical characteristics including lower leakage current and higher stability, thereby improving reliability while maintaining the high-capacity three-dimensional structure.
Solution Approach 2:
The patent employs composite material structures combining oxide semiconductors with specific insulating materials (such as hafnium oxide, silicon oxide) and conductive materials. This composite approach leverages the complementary properties of each material to achieve both high storage capacity and enhanced device reliability through improved interface characteristics and reduced defects.
Data Source
AI summary
A novel semiconductor device is provided. A component extending in a first direction, and a first conductor and a second conductor extending in a second direction are provided. The component includes a third conductor, a first insulator, a first semiconductor, and a second insulator. In a first intersection portion of the component and the first conductor, the first insulator, the first semiconductor, the second insulator, a second semiconductor, and a third insulator are provided concentrically. In a second intersection portion of the component and the second conductor, the first insulator, the first semiconductor, the second insulator, a fourth conductor, and a fourth insulator are provided concentrically around the third conductor.