Metal Oxide Oscillator Circuit for Low-Power Battery Control

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Solution Overview

Problem

Existing semiconductor devices lack novel structures that reduce power consumption while maintaining effective signal processing and battery control functions.

Innovation Solution

A semiconductor device incorporating a metal oxide transistor with indium or zinc in the channel formation region, featuring a specific circuit configuration that includes oscillators, transistors, capacitors, and wiring to achieve signal shaping and amplification, and a battery control circuit that efficiently manages power storage and protection.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Use of energy by moving object

If conventional oscillators and amplifier circuits are used, then signal processing functions are provided, but power consumption is high

Engineering Contradiction:
Improvepower consumptionVSAvoidsignal processing capability
Core Design Contradiction:
Use of energy by moving objectVSReliability

Solution Approach 1:

The patent applies parameter changes by utilizing metal oxide semiconductors (such as In-Ga-Zn-O) with specific compositional ratios and structural configurations to fundamentally alter the electrical characteristics of transistors. This enables the circuit to achieve oscillation and amplification functions with significantly reduced power consumption while maintaining signal processing capability, directly resolving the contradiction between low power consumption and reliable signal processing.

Inventive Principle:
Principle #35Parameter changes

2Use of energy by moving object

If existing battery control circuits are used, then battery management functions are provided, but power consumption and circuit complexity are high

Engineering Contradiction:
Improvepower consumptionVSAvoidcircuit structure
Core Design Contradiction:
Use of energy by moving objectVSDevice complexity

Solution Approach 1:

The patent merges multiple functions into a single integrated circuit structure. The oscillator circuit and battery control circuit share common components including metal oxide transistor switches (first through fourth switches), capacitors (first through third capacitors), and wiring structures. This consolidation enables simultaneous achievement of oscillation function, battery control function, and power consumption reduction while simplifying the overall circuit architecture.

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The metal oxide transistor switches serve multiple functions within the circuit. For example, the first switch operates as part of the oscillator circuit to generate oscillation signals, while simultaneously functioning in the battery control circuit to manage battery charging/discharging operations. This multi-functionality reduces the total number of components needed and lowers overall power consumption.

Inventive Principle:
Principle #6Universality (Multi-functionality)

Data Source

PatentUS12176810B2Semiconductor device and method for operating semiconductor device
Publication Date: 2024.12.24 SEMICON ENERGY LAB CO LTD
  • US12176810B2 patent drawing
  • US12176810B2 patent drawing
  • US12176810B2 patent drawing

AI summary

A novel oscillator, an amplifier circuit, an inverter circuit, an amplifier circuit, a battery control circuit, a battery protection circuit, a power storage device, a semiconductor device, an electric device, and the like are provided. The semiconductor device includes an oscillator including a first transistor containing a metal oxide, and a second transistor to a fifth transistor, in which a first potential is supplied to a gate of the second transistor and a gate of the third transistor when the first transistor is turned on, and the first potential is held when the first transistor is turned off. The oscillator supplies a first signal based on the first potential to a first circuit. The first circuit performs at least one of shaping and amplification on the first signal. The second transistor and the fourth transistor are connected in series, and the third transistor and the fifth transistor are connected in series. A source or a drain of the third transistor is electrically connected to a gate of the fourth transistor, and a source or a drain of the fourth transistor is electrically connected to the gate of the third transistor.