Oxide Semiconductor Layer Formation via Peroxide Solution
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Solution Overview
Problem
The existing methods for forming oxide semiconductor layers, such as sputtering and PECVD, require high vacuum environments and are costly, while solution processes like spin coating struggle with controlling oxygen concentration and often degrade the quality of the films due to additional impurities or reactivity limitations.
Innovation Solution
A composition and method involving a precursor material mixed with a peroxide material, such as hydrogen peroxide or benzoyl peroxide, is used to form an oxide semiconductor layer through a solution-based process, including steps like soft baking, hard baking, and photo energy supply to control film formation and improve carrier mobility.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If sputtering or PECVD process is used to deposit oxide semiconductor films, then high quality films with good carrier mobility are achieved, but high vacuum environment is required and equipment cost increases
Solution Approach 1:
The patent replaces the mechanical vacuum-based deposition system (sputtering/PECVD) with a chemical solution-based deposition system. The oxide semiconductor layer is formed by coating a solution containing metal precursor and peroxide, followed by thermal treatment, eliminating the need for complex vacuum equipment while achieving comparable film quality and carrier mobility.
Solution Approach 2:
The patent changes the deposition parameters from vacuum-based physical deposition to solution-based chemical deposition. By controlling the concentration of metal precursor and peroxide in the solution, along with thermal treatment conditions, the method achieves high-quality oxide semiconductor films without requiring vacuum environment.
2Ease of manufacture
If solution process is used to deposit oxide semiconductor film, then equipment cost is reduced, but oxygen concentration control becomes difficult and film quality degrades
Solution Approach 1:
The patent introduces peroxide as an intermediary substance that reacts with the metal precursor during thermal treatment to provide controlled oxygen incorporation into the oxide semiconductor layer. This mediator mechanism enables precise oxygen concentration control in the solution-based process, overcoming the typical limitation of solution deposition.
Solution Approach 2:
The patent uses peroxide (a strong oxidant) to accelerate and control the oxidation of metal precursor during thermal treatment. This ensures complete and controlled formation of oxide semiconductor phase with appropriate oxygen concentration, improving film quality while maintaining low-cost solution processing.
3Temperature
If catalyst is used in solution process to form oxide semiconductor film, then deposition temperature is reduced, but additional impurities are introduced and film quality degrades
Solution Approach 1:
The patent extracts and eliminates the catalyst component from the solution process while maintaining low deposition temperature through direct thermal decomposition of the metal precursor-peroxide system. This removes the source of additional impurities that would otherwise be introduced by catalysts, thereby preserving film quality.
4Productivity
If metal precursors with high reactivity are used in solution process, then oxide film formation is enhanced, but process flexibility is restricted by reactivity limitations
Solution Approach 1:
The patent changes the reactivity parameters by using peroxide as a controlled oxygen source that reacts with metal precursors under mild thermal conditions. This approach enables oxide film formation with moderate reactivity requirements, providing greater process flexibility and adaptability to different substrate types while maintaining productive film formation rates.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for the formation of high-quality oxide semiconductor layers with improved carrier mobility, reduced costs, and flexibility in substrate use, including large-area and flexible substrates, while maintaining control over oxygen concentration and film properties.
Implementation Method 1
The peroxide material may include at least one among hydrogen peroxide (H2O2), acetone peroxide (C6H12O4), 1,2,4-trioxane (C3H6O3), benzoyl peroxide (C14H10O4) and methyl-ethyl-ketone-peroxide (MEKP)
Implementation Method 2
supplying photo energy to the substrate after at least one step among the steps (a), (b), (d) and (e)
Implementation Method 3
a method of forming an oxide semiconductor layer includes the steps of (a) mixing a precursor material with a peroxide material to form a precursor solution, (b) coating the precursor solution on a substrate, and (c) baking the coated precursor solution
Implementation Method 4
The step of supplying photo energy may include irradiating a light having energy that is higher than bonding energy of the precursor material
Data Source
AI summary
Methods of forming an oxide material layer are provided. The method includes mixing a precursor material with a peroxide material to form a precursor solution, coating the precursor solution on a substrate, and baking the coated precursor solution.