Oxide Semiconductor Photoelectric Sensor for Spectral Selectivity
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing photoelectric sensors integrated on substrates face challenges such as strong absorption of ambient light, poor spectral selectivity, and increased manufacturing complexity due to the use of amorphous silicon PIN and hydrogen in plasma etching processes.
Innovation Solution
A photoelectric sensor design incorporating a photoelectric conversion layer made of an oxide semiconductor material, with a first and second electrode configured to drive the layer, where the electrodes have a work function greater than the electron affinity of the photoelectric conversion layer by more than 0.65 eV, and optionally including a dielectric layer and a protective layer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Use of energy by moving object
If amorphous silicon PIN is used for photoelectric conversion, then photoelectric conversion efficiency is improved, but spectral selectivity deteriorates due to strong absorption of ambient light
Solution Approach 1:
The patent changes the material parameter of the photoelectric conversion layer from amorphous silicon PIN to oxide semiconductor material, which fundamentally alters the absorption characteristics. This material substitution enables the photoelectric conversion layer to selectively respond to specific wavelengths while reducing absorption of ambient light, thereby improving spectral selectivity without sacrificing photoelectric conversion efficiency
Solution Approach 2:
The patent employs a composite structure combining oxide semiconductor material with specific electrode materials (such as ITO, TiN, or Mo) that have work functions greater than the electron affinity of the oxide semiconductor by more than 0.65 eV. This composite material system achieves both high photoelectric conversion efficiency and improved spectral selectivity by optimizing the interface properties between different materials
2Reliability
If hydrogen diffusion is used to adjust TFT characteristics, then switching characteristics are improved, but manufacturing complexity increases
Solution Approach 1:
The patent changes the material composition of the photoelectric conversion layer to oxide semiconductor, which inherently eliminates the hydrogen diffusion issue that complicates TFT manufacturing. This material parameter change allows for simplified manufacturing processes while maintaining reliable switching characteristics, as the oxide semiconductor layer does not require hydrogen diffusion treatment for proper operation
Solution Approach 2:
The patent extracts and removes the hydrogen diffusion step from the manufacturing process by using oxide semiconductor material that does not require such treatment. This eliminates a complex manufacturing step while preserving the necessary switching characteristics, thereby reducing overall manufacturing complexity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design reduces absorption of long-wavelength light, improves signal selection ratio, simplifies the manufacturing process, and enhances the overall performance of the photoelectric sensor, making it suitable for applications like fingerprint identification, ambient light compensation, and visible light communication.
Implementation Method 1
A photoelectric sensor is a device that converts a light signal into an electrical signal
Implementation Method 2
the oxide semiconductor material includes at least one of IGZO, ITZO and IGTO... reduces long-wavelength light absorption
Data Source
AI summary
A photoelectric sensor and a substrate are disclosed. The photoelectric sensor includes a photoelectric conversion layer, a first electrode and a second electrode, wherein the first electrode is arranged on a side of the photoelectric conversion layer, and the second electrode is arranged on a side of the photoelectric conversion layer and is spaced apart from the first electrode; wherein the first electrode and the second electrode are configured to drive the photoelectric conversion layer; and in a direction perpendicular to a surface of the photoelectric conversion layer, the first electrode and the second electrode are overlapped with the photoelectric conversion layer respectively, and the photoelectric conversion layer includes an oxide semiconductor material.