Oxide PIN Diode Optical Sensor for OLED Brightness Compensation

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Solution Overview

Problem

Current OLED display devices face challenges in real-time optical compensation for brightness changes due to the limitations of electrical compensation, which cannot address Mura caused by OLED aging, and existing optical compensation methods introduce hydrogen that affects thin film transistor performance and have complex, low-efficiency processes.

Innovation Solution

An optical sensor incorporating a PIN diode made of oxide materials, specifically P-type oxide, high-oxygen IGZO, and low-oxygen IGZO regions, integrated with a thin film transistor, allowing for real-time optical compensation without hydrogen introduction and simplifying the manufacturing process.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If electrical compensation is used for brightness compensation in OLED display devices, then the Mura caused by threshold voltage and mobility changes can be compensated, but the brightness change caused by OLED aging cannot be compensated

Engineering Contradiction:
Improvebrightness compensation capabilityVSAvoidcompensation scope
Core Design Contradiction:
ReliabilityVSAdaptability or versatility

Solution Approach 1:

An optical sensor is introduced as an intermediary component to detect OLED brightness in real-time. The sensor includes a PIN diode with P region, I region, and N region made of oxide materials, positioned adjacent to the OLED to capture emitted light and convert it to electrical signals for compensation control

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

A feedback loop is established where the optical sensor continuously monitors OLED brightness output and feeds this information back to a compensation controller. The controller adjusts drive signals based on detected brightness changes, enabling real-time compensation for both threshold voltage drift and OLED aging effects

Inventive Principle:
Principle #23Feedback

2Reliability

If traditional optical compensation methods are used, then real-time optical compensation can be achieved, but hydrogen is introduced that affects thin film transistor performance and the process becomes complex and low-efficiency

Engineering Contradiction:
Improvereal-time optical compensationVSAvoidmanufacturing process simplicity
Core Design Contradiction:
ReliabilityVSEase of manufacture

Solution Approach 1:

The material composition parameters are changed from traditional silicon-based semiconductors to oxide materials (IGZO for I and N regions, P-type oxide for P region). This parameter change eliminates hydrogen introduction while maintaining the optical detection function, and the oxide materials can be deposited using simple sputtering processes compatible with existing TFT manufacturing

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The oxide semiconductor materials serve multiple functions: they form the PIN diode for optical detection and are compatible with the existing thin film transistor manufacturing process. The same sputtering equipment and oxide material deposition techniques used for TFT active layers can be used for the PIN diode regions, simplifying the overall manufacturing process

Inventive Principle:
Principle #6Universality (Multi-functionality)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution enables effective real-time optical compensation, improving display performance and reducing Mura caused by electroluminescent brightness changes, while simplifying the manufacturing process and enhancing the display effect.

Implementation Method 1

The optical sensor includes: a thin film transistor and a PIN diode on a surface of a drain of the thin film transistor

Methodology Applied
Scientific EffectPhotoelectric effect: Photoelectric Effect

Data Source

PatentUS11404493B2Optical sensor and manufacturing method thereof, display device and display apparatus
Publication Date: 2022.08.02 BOE TECHNOLOGY GROUP CO LTD
  • US11404493B2 patent drawing
  • US11404493B2 patent drawing
  • US11404493B2 patent drawing

AI summary

The present disclosure provides an optical sensor, a manufacturing method thereof, a display device, and a display apparatus, and relates to the display technology. The optical sensor includes a thin film transistor and a PIN diode on a surface of a drain of the thin film transistor. A material of a P region of the PIN diode, a material of an I region of the PIN diode, and a material of an N region of the PIN diode are oxides. Since the PIN diode is made of oxides rather than amorphous silicon, hydrogen is not introduced. Therefore, the performance of the thin film transistor will not be affected, thereby achieving the improvement of the performance of the display device and the display effect.