Oxide Semiconductor Pixel Circuit for Stable High-Speed Driving
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Solution Overview
Problem
Current semiconductor devices for display apparatuses in extended reality and other electronic devices face challenges in achieving stable operation, high driving speed, and high reliability, particularly in reducing variations in transistor characteristics and power consumption.
Innovation Solution
A semiconductor device comprising multiple transistors and capacitors with specific electrical connections to enhance stability and driving speed, utilizing oxide semiconductors like In—Ga—Zn oxide for improved performance and reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional silicon-based semiconductor materials are used in transistors, then manufacturing maturity and ease of fabrication are maintained, but transistor characteristic variations increase and off-state current remains high
Solution Approach 1:
The patent changes the material parameter from conventional silicon-based semiconductors to oxide semiconductors (In-Ga-Zn-O), fundamentally altering the semiconductor properties to achieve lower off-state current and reduced threshold voltage shifts while maintaining compatibility with existing fabrication processes
Solution Approach 2:
The patent employs composite material structures including oxide semiconductor layers combined with metal electrodes (Al, Mo, TiN) and insulating layers, creating a multi-material transistor structure that leverages the advantages of each material to achieve both low off-state current and manufacturing feasibility
2Reliability
If oxide semiconductor transistors are used, then off-state current decreases and threshold voltage stability improves, but manufacturing process complexity increases
Solution Approach 1:
The patent divides the transistor structure into distinct functional layers (oxide semiconductor layer, metal electrodes, insulating layers) that can be fabricated separately using standard processes, reducing overall manufacturing complexity while achieving superior electrical characteristics
Solution Approach 2:
The oxide semiconductor transistor design is made compatible with existing LCD and OLED manufacturing infrastructure, allowing the same fabrication equipment and processes to produce both conventional and oxide semiconductor devices, thereby minimizing the increase in manufacturing complexity
3Manufacturing precision
If transistor size is reduced for higher resolution displays, then pixel density increases, but transistor characteristic variations and power consumption increase
Solution Approach 1:
The patent changes the semiconductor material parameters to oxide semiconductors, which inherently provide lower off-state current and reduced threshold voltage shifts, enabling smaller transistor sizes with improved characteristic uniformity rather than degraded performance
Solution Approach 2:
The oxide semiconductor material self-regulates its electrical characteristics through its inherent low defect density and stable band structure, automatically compensating for size reduction effects and maintaining uniform transistor characteristics across the display panel
Data Source
AI summary
A semiconductor device with a high driving speed is provided. The semiconductor device includes first to third transistors and a first capacitor. One of a source and a drain of the third transistor is electrically connected to a gate of the second transistor, and the other of the source and the drain of the third transistor is electrically connected to a gate of the first transistor and a first terminal of the first capacitor. One of a source and a drain of the first transistor is electrically connected to one of a source and a drain of the second transistor, and the other of the source and the drain of the first transistor is electrically connected to the other of the source and the drain of the second transistor and a second terminal of the first capacitor.