Oxide Semiconductor Pixel Circuits for Low-Leakage Display Accuracy
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Solution Overview
Problem
Existing semiconductor devices, particularly those using amorphous silicon thin film transistors, face challenges with high off-state current, low field-effect mobility, and limited voltage withstand, which affect the accuracy and reliability of display devices like liquid crystal displays.
Innovation Solution
The use of oxide semiconductors, specifically MOS transistors with intrinsic oxide semiconductor materials, is implemented to reduce off-state current, enhance voltage withstand, and improve display accuracy by forming circuits with transistors that have low off-state current and multi-gate structures.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of stationary object
If amorphous silicon thin film transistors are used, then larger glass substrates can be used, but off-state current is high and field-effect mobility is low
Solution Approach 1:
The patent changes the material parameter from amorphous silicon to oxide semiconductor, which fundamentally alters the electrical characteristics to achieve low off-state current while maintaining compatibility with large substrate manufacturing
2Area of stationary object
If amorphous silicon thin film transistors are used, then larger glass substrates can be used, but field-effect mobility is low
Solution Approach 1:
The patent changes the material parameter from amorphous silicon to oxide semiconductor, which fundamentally alters the electrical characteristics to achieve low off-state current while maintaining compatibility with large substrate manufacturing
3Reliability
If oxide semiconductor transistors are used, then off-state current is reduced and voltage withstand is enhanced, but device complexity increases
Solution Approach 1:
The transistor is segmented into multiple gates (first gate electrode and second gate electrode) that can be independently controlled, allowing separate optimization of threshold voltage and channel formation to simplify the overall device operation
Solution Approach 2:
The oxide semiconductor layer serves multiple functions: as the active channel layer, as the gate insulator alternative, and as the threshold control mechanism, reducing the need for separate components
Data Source
AI summary
An object is to provide a display device that performs accurate display. A circuit is formed using a transistor that includes an oxide semiconductor and has a low off-state current. A precharge circuit or an inspection circuit is formed in addition to a pixel circuit. The off-state current is low because the oxide semiconductor is used. Thus, it is not likely that a signal or voltage is leaked in the precharge circuit or the inspection circuit to cause defective display. As a result, a display device that performs accurate display can be provided.