Oxide Semiconductor Pixel Contact Structure With Low Resistance
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Solution Overview
Problem
In semiconductor devices using oxide semiconductor layers, the contact resistance between the oxide semiconductor layer and the transparent conductive layer is increased due to the formation of a high resistance oxide layer, which reduces the aperture ratio and electrical characteristics, especially in miniaturized pixel circuits where a metal pedestal is required between the silicon layer and the transparent conductive layer.
Innovation Solution
A display device configuration with an oxide semiconductor layer having a polycrystalline structure, where a first transparent conductive layer with different crystallizability is in contact with the oxide semiconductor layer, and a second transparent conductive layer is separated from the first layer, reducing contact resistance by crystallizing the connecting electrode immediately after film formation to match the oxide semiconductor layer's crystal structure.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a metal pedestal is provided between the silicon layer and the transparent conductive layer to enable contact, then the electrical connection is achieved, but the aperture ratio of the pixel is reduced
Solution Approach 1:
The invention extracts and removes the metal pedestal structure from the pixel contact structure. By using a transparent conductive layer directly in contact with the oxide semiconductor layer, the metal pedestal is eliminated, thereby maintaining electrical connection while avoiding the reduction of aperture ratio that would result from adding a metal layer in the display region
Solution Approach 2:
The transparent conductive layer serves as an intermediary between the oxide semiconductor layer and the pixel electrode. This intermediary structure enables electrical connection without requiring a metal pedestal, thus resolving the contradiction between achieving reliable electrical connection and maintaining high aperture ratio
2Area of stationary object
If the transparent conductive layer is directly in contact with the oxide semiconductor layer, then the aperture ratio is maintained, but contact resistance may be increased depending on the manufacturing process
Solution Approach 1:
The invention changes the manufacturing parameters, specifically the deposition temperature, to be 100°C or higher. This parameter change enables the transparent conductive layer to be in direct contact with the oxide semiconductor layer while maintaining low contact resistance, thus resolving the contradiction between maintaining aperture ratio and ensuring low contact resistance
Solution Approach 2:
The invention applies local quality by ensuring the transparent conductive layer has appropriate crystallinity and material properties specifically at the contact region with the oxide semiconductor layer. This localized optimization of material properties enables low contact resistance while maintaining the overall aperture ratio
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration reduces contact resistance and maintains electrical characteristics, increasing the process margin without deteriorating the semiconductor device's performance, thereby enhancing the aperture ratio and transmittance in miniaturized pixel circuits.
Implementation Method 1
crystallizing the connecting electrode immediately after film formation to match the oxide semiconductor layer's crystal structure
Data Source
AI summary
A semiconductor device includes an oxide semiconductor layer including a polycrystalline structure, a gate electrode facing the oxide semiconductor layer, a gate insulating layer between the oxide semiconductor layer and the gate electrode, a first transparent conductive layer connected to the oxide semiconductor layer, and a second transparent conductive layer arranged in the same layer as the first transparent conductive layer and separated from the first transparent conductive layer, wherein crystallizability of the first transparent conductive layer is different from crystallizability of the second transparent conductive layer.