Oxide Semiconductor Pixel TFT Aperture Ratio
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Solution Overview
Problem
Current semiconductor devices face challenges in reducing manufacturing costs, improving aperture ratio, achieving higher-resolution images, and operating at high speeds, particularly in display devices that utilize oxide semiconductors and conductors.
Innovation Solution
A display device design where a driver circuit and display portion are formed over the same substrate, using oxide semiconductors and conductors to reduce costs, enhance aperture ratio, and enable high-speed operation, with specific manufacturing processes involving heat treatment and material selection to optimize electrical characteristics.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If driver circuit and display portion are formed over the same substrate, then manufacturing cost is reduced, but device complexity increases
Solution Approach 1:
The driver circuit portion and display portion are integrated over the same substrate, merging two previously separate components into a single device structure. This integration eliminates the need for separate substrates and reduces assembly steps, directly reducing manufacturing cost while managing complexity through unified fabrication processes.
Solution Approach 2:
The substrate serves multiple functions by simultaneously supporting both the driver circuit portion and the display portion. This multi-functional use of the substrate reduces the total component count and simplifies the overall device architecture, addressing the manufacturing cost reduction goal while containing complexity through functional integration.
2Area of stationary object
If oxide conductor is used for source electrode and drain electrode in pixel TFT, then aperture ratio is improved, but electrical conductivity may be insufficient
Solution Approach 1:
The source electrode and drain electrode in the pixel TFT are formed using oxide conductor materials that provide both light-transmitting properties and sufficient electrical conductivity. The oxide conductor forms a composite structure with the semiconductor layer, achieving a balance between optical performance (aperture ratio) and electrical performance through material composition optimization.
Solution Approach 2:
The electrical conductivity of the oxide conductor is optimized by adjusting composition ratios and thickness parameters. By controlling the oxide conductor's physical and chemical parameters, the design achieves sufficient electrical conductivity for reliable operation while maintaining the light-transmitting properties needed for high aperture ratio.
3Reliability
If metal is used for driver circuit wiring, then electrical conductivity is improved, but manufacturing precision requirements increase
Solution Approach 1:
Different materials are used in different regions: oxide conductors are used in the pixel portion where light transmission is critical, while metals are used in the driver circuit portion where high conductivity is prioritized. This local differentiation allows each region to be optimized for its specific function, with metal wiring in the driver circuit achieving high conductivity without imposing stringent precision requirements across the entire device.
Data Source
AI summary
An object is to improve the aperture ratio of a semiconductor device. The semiconductor device includes a driver circuit portion and a display portion (also referred to as a pixel portion) over the same substrate. The driver circuit includes a channel-etched thin film transistor for driver circuit and a driver circuit wiring formed using metal. Source and drain electrodes of the thin film transistor for the driver circuit are formed using a metal. A channel layer of the thin film transistor for the driver circuit is formed using an oxide semiconductor. The display portion includes a bottom-contact thin film transistor for a pixel and a display portion wiring formed using an oxide conductor. Source and drain electrode layers of the thin film transistor for the pixel are formed using an oxide conductor. A semiconductor layer of the thin film transistor for the pixel is formed using an oxide semiconductor.