Silicon Oxide Planarization Layer Treatment for Stronger Adhesion

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Solution Overview

Problem

Poor adhesion between a dielectric layer planarized by chemical mechanical polishing and an overlying layer leads to issues of film cracking or delamination in semiconductor manufacturing.

Innovation Solution

A method involving chemical mechanical polishing to form a planar surface layer, followed by surface treatment using oxygen, hydrogen, or NH3 plasma, and the formation of a second silicon oxide layer to enhance adhesion and prevent delamination.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Shape

If chemical mechanical polishing is performed on a dielectric layer to achieve planarization, then surface flatness is improved, but adhesion between the dielectric layer and overlying layer deteriorates

Engineering Contradiction:

Improvesurface flatnessVSAvoidadhesion strength

Core Design Contradiction:

ShapeVSStrength

Solution Approach 1:

Surface treatment is performed on the planarized dielectric layer before forming the overlying layer. This preliminary action modifies the surface properties (increasing roughness or introducing reactive groups) to enhance adhesion, while the bulk material remains planar for subsequent processing

Inventive Principle:

Principle #10Preliminary action

Solution Approach 2:

The surface treatment creates a localized modification only at the top surface of the dielectric layer. The surface region has different properties (higher roughness, different chemistry) compared to the bulk, allowing simultaneous achievement of planarity for patterning and adhesion for layer bonding

Inventive Principle:

Principle #3Local quality

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The method improves adhesion between the planar surface layer and the overlying layer, effectively preventing film cracking and delamination in semiconductor devices.

Implementation Method 1

the surface treatment includes oxygen plasma treatment, hydrogen plasma treatment, or NH3 plasma treatment

Methodology Applied

Scientific EffectPlasma treatment: Plasma

Implementation Method 2

performing a chemical mechanical polishing process on a first silicon oxide layer to form a planar surface layer

Methodology Applied

Scientific EffectChemical mechanical polishing:

Data Source

PatentUS12283481B2Method for manufacturing semiconductor device

Publication Date: 2025.04.22 UNITED MICROELECTRONICS CORP

AI summary

A method for manufacturing a semiconductor device is provided. The method includes a step of performing a chemical mechanical polishing process on a first silicon oxide layer to form a planar surface layer; surface treatment is performed on the planar surface layer to form a treated planarization layer, and a second silicon oxide layer is formed on the treated planarization layer.