Oxide Semiconductor Active Device With Segmented Stripe Electrodes
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Solution Overview
Problem
Conventional thin film transistor liquid crystal displays (TFT-LCDs) face challenges in reducing the layout area of active array substrates without compromising the channel width-to-length ratio, which is essential for slim border designs and efficient current flow.
Innovation Solution
The active device incorporates an oxide semiconductor layer with altered stripe electrode arrangements and a gate insulator layer, allowing for a higher channel width-to-length ratio within the same layout area by eliminating stripe gaps and optimizing the contact areas between the semiconductor layer and electrodes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If the channel width is increased to improve current flow, then the current (Ion) increases, but the layout area significantly increases
Solution Approach 1:
The source and drain are divided into multiple stripe electrodes arranged in parallel. The source includes multiple first stripe electrodes and the drain includes multiple second stripe electrodes, creating multiple current pathways that collectively provide high current flow while maintaining compact layout
Solution Approach 2:
The electrode arrangement transitions from a single wide channel to multiple parallel narrow channels arranged in a two-dimensional grid pattern. This dimensional transformation allows the channel width-to-length ratio to be effectively increased through multiple pathways without proportionally increasing the overall layout area
2Manufacturing precision
If sources and drains are alternately arranged to increase channel width-to-length ratio, then the ratio improves, but the device complexity increases
Solution Approach 1:
Both source and drain are segmented into multiple stripe electrodes of uniform width and spacing. This segmentation creates a regular, repeating pattern that simplifies manufacturing processes compared to irregular zigzag configurations, while achieving the desired high channel width-to-length ratio
Solution Approach 2:
All stripe electrodes within the source are made identical in width, spacing, and orientation, and similarly for the drain electrodes. This homogeneity simplifies the fabrication process by reducing the number of unique electrode designs and making alignment more straightforward
Data Source
AI summary
An active device including a source, a drain, an oxide semiconductor layer, a gate and a gate insulator layer is provided. The source includes first stripe electrodes parallel to each other and a first connection electrode connected thereto. The drain includes second stripe electrodes parallel to each other and a second connection electrode connected thereto, wherein the first stripe electrodes and the second stripe electrodes are parallel to each other, electrically isolated, and alternately arranged, and a zigzag trench is formed therebetween. The gate extends along the zigzag trench. The oxide semiconductor layer is in contact with the source and drain, wherein a contact area among the oxide semiconductor layer and each first stripe electrodes substantially equals to a layout area of each first stripe electrodes and a contact area among each second stripe electrodes substantially equals to a layout area of each second stripe electrodes.