Oxide Semiconductor Transistor Aperture Ratio
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Solution Overview
Problem
Current semiconductor devices face challenges in reducing manufacturing costs, increasing aperture ratio, enhancing image resolution, and achieving high-speed operation, particularly in display devices where existing technologies struggle to efficiently integrate oxide semiconductors and conductors into a single substrate while maintaining reliable electrical characteristics.
Innovation Solution
A semiconductor device is designed with a driver circuit and display portion formed over one substrate, utilizing metal for driver circuit electrodes and oxide conductors for pixel electrodes, along with an oxide semiconductor channel layer. This configuration includes a channel protection transistor in the display portion and a channel-etched transistor in the driver circuit, with specific heat treatment processes to optimize the oxide semiconductor layer's properties, reducing water and hydrogen content, and forming high-resistance drain regions to enhance reliability and performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of moving object
If oxide semiconductor and oxide conductor are used in display portion to increase aperture ratio, then light-transmitting properties are improved, but manufacturing complexity increases due to multiple material types
Solution Approach 1:
The patent applies universality by using oxide semiconductor for multiple functions: as the semiconductor layer in pixel transistors and as the conductive material for pixel electrodes and display portion wirings. This multi-functional approach allows the display portion to achieve high aperture ratio with light-transmitting materials while standardizing the material system, thereby reducing overall manufacturing complexity despite the advanced material requirements.
Solution Approach 2:
The patent applies local quality by differentiating the transistor structures between display portion (channel protection type) and driver circuit (channel-etched type). The display portion uses a simpler channel protection structure with the oxide semiconductor layer covering the entire gate electrode, while the driver circuit uses channel-etched structures with etched channels. This localized differentiation optimizes each region's performance while managing manufacturing complexity through structured variation.
2Productivity
If driver circuit and display portion are integrated over one substrate to reduce manufacturing costs, then production efficiency is improved, but device complexity increases
Solution Approach 1:
The patent applies segmentation by dividing the integrated device into two distinct functional regions: the display portion with pixel transistors and pixel electrodes, and the driver circuit portion with driver transistors and metal wiring. Each region is optimized independently with appropriate material selections and transistor structures, then integrated on a single substrate. This segmented approach enables efficient manufacturing through standardized process modules while managing the complexity of the integrated system.
Solution Approach 2:
The patent resolves the complexity of integration by utilizing spatial dimensionality: the driver circuit is positioned in a peripheral region surrounding the active display area. This spatial arrangement allows both functions to coexist on one substrate without interfering with each other's optical or electrical performance, achieving high manufacturing efficiency while keeping the device structure manageable through strategic layout.
3Ease of manufacture
If channel protection structure is used in display portion to simplify manufacturing, then ease of manufacture is improved, but transistor performance may be limited compared to channel-etched structures
Solution Approach 1:
The patent applies local quality by assigning different transistor structures to different functional regions: the channel protection structure is used specifically in the display portion where simplicity and manufacturing ease are priorities, while channel-etched structures are used in the driver circuit where high performance and reliability are critical. This localized optimization ensures each region gets the appropriate structure for its functional requirements without compromising overall device performance.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively reduces manufacturing costs, increases the aperture ratio, and improves image resolution by enabling high-speed operation through the use of oxide semiconductors and conductors, while ensuring reliable electrical characteristics and high withstand voltage in the semiconductor device.
Implementation Method 1
specific heat treatment processes to optimize the oxide semiconductor layer's properties, reducing water and hydrogen content
Implementation Method 2
both the oxide conductor and the oxide semiconductor have light-transmitting properties
Implementation Method 3
the TFT in which the oxide semiconductor is used has high field effect mobility
Data Source
AI summary
An object is to increase an aperture ratio of a semiconductor device. The semiconductor device includes a driver circuit portion and a display portion (also referred to as a pixel portion) over one substrate. The driver circuit portion includes a channel-etched thin film transistor for a driver circuit, in which a source electrode and a drain electrode are formed using metal and a channel layer is formed of an oxide semiconductor, and a driver circuit wiring formed using metal. The display portion includes a channel protection thin film transistor for a pixel, in which a source electrode layer and a drain electrode layer are formed using an oxide conductor and a semiconductor layer is formed of an oxide semiconductor, and a display portion wiring formed using an oxide conductor.