Oxide Semiconductor Auxiliary Electrode for OLED Array Substrates
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Solution Overview
Problem
The existing fabrication process for inverted OLED devices is complex and costly due to the need for a separate process to form the auxiliary electrode, which can lead to issues like disconnection and oxidation of the cathode, reducing conductivity and light intensity.
Innovation Solution
An array substrate with an auxiliary electrode formed by a modification treatment on an oxide semiconductor active layer, integrated in the same layer as the thin film transistor, eliminating the need for a separate etching process and reducing fabrication costs.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a separate auxiliary electrode is added to improve conductivity and reduce voltage gradient, then the electrical performance is improved, but the fabrication process complexity and cost increase
Solution Approach 1:
The patent merges the auxiliary electrode function with the oxide semiconductor layer by performing modification treatment on specific regions of the oxide semiconductor. This integration eliminates the need for separate auxiliary electrode materials and processes, while maintaining the conductivity enhancement function. The oxide semiconductor layer serves dual purposes: as the active layer for the thin film transistor and as the auxiliary electrode when modified in specific regions.
Solution Approach 2:
The oxide semiconductor layer is designed to perform multiple functions: it acts as the active layer for the thin film transistor in switching regions, and as the auxiliary electrode in regions where modification treatment is applied. This multi-functionality reduces the overall device complexity and eliminates the need for separate auxiliary electrode structures.
2Reliability
If traditional sputtering and etching processes are used to form auxiliary electrode, then the conductivity is improved, but the fabrication cost and process time increase
Solution Approach 1:
The patent combines the formation of the auxiliary electrode with the existing oxide semiconductor layer deposition process. Instead of adding separate sputtering and etching steps for auxiliary electrode formation, the auxiliary electrode is created by modifying specific regions of the already-deposited oxide semiconductor layer, thereby saving process time and reducing fabrication complexity.
Solution Approach 2:
The patent changes the physical or chemical parameters of the oxide semiconductor layer through modification treatment (such as plasma treatment, ion implantation, or thermal annealing) to transform non-conductive or low-conductivity oxide semiconductor into a conductive auxiliary electrode. This parameter change approach eliminates the need for traditional metal sputtering processes.
3Device complexity
If thin cathode is used to maintain transparency and flexibility, then the device structure is simplified, but the conductivity and reliability decrease due to disconnection and oxidation
Solution Approach 1:
The patent introduces the modified oxide semiconductor layer as an intermediary conductive element between the thin cathode and the external circuit. This intermediary auxiliary electrode provides a robust conductive path that compensates for the limitations of the thin cathode, preventing disconnection and oxidation issues while maintaining the overall simplified device structure.
Solution Approach 2:
The auxiliary electrode function is merged into the oxide semiconductor layer that is already part of the thin film transistor structure. This integration provides enhanced conductivity and reliability without adding separate cathode layers or complex multi-layer structures, thereby maintaining device simplicity while improving reliability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Simplifies the fabrication process by integrating the auxiliary electrode with the active layer, reducing the overall process time and cost while maintaining conductivity and light intensity.
Implementation Method 1
the auxiliary electrode is an electric conductor which is formed by performing a plasma treatment or ion implantation on the oxide semiconductor
Implementation Method 2
the auxiliary electrode is an electric conductor which is formed by performing a plasma treatment or ion implantation on the oxide semiconductor
Data Source
AI summary
The present invention relates to an array substrate, a fabricating method thereof, and a display device. The array substrate comprises a thin film transistor, an auxiliary electrode which is arranged in a same layer as an active layer of the thin film transistor, and a transparent cathode which is electrically connected with the auxiliary electrode, wherein the active layer is an oxide semiconductor, and the auxiliary electrode is an electric conductor which is formed by performing a modification treatment on the oxide semiconductor. According to technical solutions of the present invention, the active layer and the auxiliary electrode are arranged in a same layer, a pattern of the active layer and the auxiliary electrode can be formed by a same etching process, and a separate process for forming the auxiliary electrode is not required, thus reducing the overall process time of the array substrate and saving the fabricating cost.