Oxide Semiconductor Barrier Layer Oxygen Loss Prevention
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Solution Overview
Problem
The existing semiconductor devices using oxide semiconductors face issues with foreign substance defects at the interface between the oxide semiconductor and the insulating layer, leading to deteriorated characteristics due to oxygen loss and protrusion formation, which affects the performance and reliability of thin film transistors.
Innovation Solution
A semiconductor device is designed with a barrier layer having a lower standard electrode potential, lower electron affinity, or a larger band gap than the oxide semiconductor, combined with a silicon-based oxide or nitride insulating layer to prevent oxygen loss and defect generation, using materials like indium, gallium, zinc, or tin oxides, and incorporating a barrier layer with strong oxygen combination forces to stabilize the oxide semiconductor.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If an insulating layer is deposited on the oxide semiconductor by using plasma, then the manufacturing process can be completed, but foreign substance defects are generated at the interface between the oxide semiconductor and the insulating layer
Solution Approach 1:
A barrier layer is introduced as an intermediary between the oxide semiconductor layer and the insulating layer. This barrier layer prevents direct contact between the plasma and the oxide semiconductor, thereby preventing foreign substance defects at the interface while still allowing the manufacturing process to proceed. The barrier layer acts as a protective mediator that resolves the contradiction between completing the manufacturing process and maintaining interface quality.
2Productivity
If plasma is used to deposit the insulating layer, then deposition can be performed efficiently, but oxygen loss occurs in the oxide semiconductor leading to protrusion formation
Solution Approach 1:
The barrier layer serves as a protective intermediary that shields the oxide semiconductor from plasma exposure during insulating layer deposition. This prevents oxygen loss and protrusion formation in the oxide semiconductor while allowing efficient plasma deposition to proceed. The barrier layer maintains the compositional stability of the oxide semiconductor without sacrificing deposition efficiency.
3Reliability
If a barrier layer is added to prevent oxygen loss, then interface quality improves, but device structure becomes more complex
Solution Approach 1:
The device structure is segmented into distinct functional layers, with the barrier layer being a separate, thin layer between the oxide semiconductor and the insulating layer. This segmentation allows the barrier layer to perform its protective function without significantly increasing overall device complexity. The barrier layer is designed as a thin, functionally-specific layer that improves interface quality while maintaining reasonable structural simplicity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively prevents oxygen loss and protrusion formation, enhancing the uniformity and stability of the semiconductor device, improving the charge mobility and ON/OFF ratio, and increasing the photoelectronic reliability of thin film transistors.
Implementation Method 1
the barrier layer includes a material including a lower standard electrode potential than a semiconductor material of the oxide semiconductor
Implementation Method 2
a lower electron affinity than the semiconductor material of the oxide semiconductor
Implementation Method 3
or a larger band gap than the semiconductor material of the oxide semiconductor
Implementation Method 4
the insulating layer includes at least one of a silicon-based oxide or a silicon-based nitride
Data Source
AI summary
A semiconductor device includes: a substrate, a semiconductor layer including an oxide semiconductor disposed on the substrate, a barrier layer disposed on the semiconductor layer and an insulating layer disposed on the barrier layer. The semiconductor layer includes an oxide semiconductor, and the barrier layer includes a material having a lower standard electrode potential than a semiconductor material of the oxide semiconductor, a lower electron affinity than the semiconductor material of the oxide semiconductor, or a larger band gap than the semiconductor material of the oxide semiconductor. The insulating layer includes at least one of a silicon-based oxide or a silicon-based nitride, and the insulating layer includes a portion which contacts with an upper surface of the barrier layer.