Oxide Semiconductor Transistor Barrier Layer Oxygen Diffusion
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Solution Overview
Problem
Transistors using oxide semiconductors face challenges with normally-on characteristics, low reliability, high off-state current, and difficulty in implementing logic circuits in driver circuits, leading to issues with power consumption and integration in electronic devices.
Innovation Solution
A semiconductor device structure incorporating a transistor with an oxide semiconductor, featuring a barrier layer and insulators with oxygen barrier properties, along with a capacitor configuration to manage oxygen and hydrogen diffusion, enhancing reliability and reducing off-state current while maintaining low power consumption.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If a transistor including an oxide semiconductor is used, then the transistor can be operated at higher speed and manufactured more easily, but the reliability is low due to high possibility of change in electrical characteristics
Solution Approach 1:
The patent changes the chemical composition parameters of the oxide semiconductor by controlling the sputtering gas atmosphere (introducing oxygen during formation) and adjusting the stoichiometric ratio to In-rich conditions. This parameter control reduces oxygen vacancies and stabilizes electrical characteristics while maintaining high-speed operation capabilities
Solution Approach 2:
The patent creates local quality differences by forming an In-rich region specifically in the channel formation region of the oxide semiconductor layer. This localized compositional control ensures stable electrical characteristics where needed while maintaining overall device performance
2Ease of manufacture
If a transistor including an oxide semiconductor is used, then the manufacturing process is easier, but the transistor has normally-on characteristics making it difficult to provide logic circuits that operate properly
Solution Approach 1:
The patent changes the compositional parameters by making the oxide semiconductor In-rich (containing more In than stoichiometric proportion). This parameter change enables proper off-state characteristics and threshold voltage control, allowing logic circuits to operate correctly while maintaining ease of manufacture through sputtering process
3Use of energy by moving object
If a transistor including an oxide semiconductor is used, then low power consumption can be achieved, but the off-state current is high reducing efficiency
Solution Approach 1:
The patent optimizes the compositional parameters of the oxide semiconductor by controlling the In content to be richer than stoichiometric proportion. This parameter optimization reduces off-state current by minimizing oxygen vacancies and improving material quality, thereby reducing energy loss while maintaining low power consumption characteristics
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution improves the reliability and reduces off-state current of oxide semiconductor transistors, enabling high-speed, low-power consumption, and highly integrated semiconductor devices with improved yield and productivity.
Implementation Method 1
insulators with oxygen barrier properties, along with a capacitor configuration to manage oxygen and hydrogen diffusion
Implementation Method 2
The second insulator includes an excess-oxygen region
Data Source
AI summary
A highly reliable semiconductor device suitable for miniaturization and high integration is provided. The semiconductor device includes a first insulator; a transistor over the first insulator; a second insulator over the transistor; a first conductor embedded in an opening in the second insulator; a barrier layer over the first conductor; a third insulator over the second insulator and over the barrier layer; and a second conductor over the third insulator. The first insulator, the third insulator, and the barrier layer have a barrier property against oxygen and hydrogen. The second insulator includes an excess-oxygen region. The transistor includes an oxide semiconductor. The barrier layer, the third insulator, and the second conductor function as a capacitor.