Oxide Semiconductor Breakdown Voltage via Crystalline Surface
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current semiconductor devices for high power applications face challenges with silicon carbide, including difficulty in manufacturing due to its characteristics and presence of defects like micropipes, which hinders the development of high productivity and high breakdown voltage devices.
Innovation Solution
A semiconductor device utilizing an oxide semiconductor material with a crystal region at the superficial portion, specifically an In--Ga--Zn--O-based oxide semiconductor layer, which includes a crystal region of In2Ga2ZnO7, to enhance breakdown voltage and productivity, and a manufacturing method involving a sputtering process and heat treatment to form the crystal region.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If silicon carbide is used as semiconductor material, then breakdown voltage is improved, but manufacturing difficulty increases and defects like micropipes occur
Solution Approach 1:
The invention changes the material parameter from silicon carbide to oxide semiconductor (In-Ga-Zn-O), fundamentally altering the material properties to achieve high breakdown voltage through different physical mechanisms while enabling compatibility with existing semiconductor manufacturing processes
Solution Approach 2:
The invention uses oxide semiconductor material that can be manufactured using conventional sputtering equipment and processes, replacing expensive and difficult-to-manufacture silicon carbide with a material that leverages existing manufacturing infrastructure
2Reliability
If silicon carbide is used as semiconductor material, then breakdown voltage is improved, but productivity decreases due to manufacturing difficulties
Solution Approach 1:
The invention changes the material system from silicon carbide to oxide semiconductor, enabling high breakdown voltage devices to be manufactured using conventional sputtering processes rather than specialized high-temperature growth methods, thereby significantly improving productivity
Solution Approach 2:
The oxide semiconductor material can be manufactured using existing sputtering equipment and processes already deployed for other semiconductor devices, making the manufacturing line universally applicable and improving overall productivity
3Reliability
If oxide semiconductor with crystal region is used, then breakdown voltage is improved, but manufacturing process complexity increases
Solution Approach 1:
The invention incorporates a preliminary heat treatment step after sputtering to form the crystal region in the oxide semiconductor layer. This preliminary crystallization action simplifies subsequent processing by ensuring the material has the required properties before device fabrication begins
Solution Approach 2:
The invention utilizes the phase transition from amorphous to crystalline state in the oxide semiconductor through controlled heat treatment. This phase transition creates the necessary crystal region for high breakdown voltage while using a simple thermal process rather than complex manufacturing steps
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The semiconductor device achieves improved breakdown voltage and productivity, enabling high power applications with reduced manufacturing costs and overcoming the limitations of silicon carbide, such as micropipes and manufacturing difficulties.
Implementation Method 1
a manufacturing method involving a sputtering process and heat treatment to form the crystal region
Implementation Method 2
a manufacturing method involving a sputtering process and heat treatment to form the crystal region
Data Source
AI summary
The semiconductor device includes a first conductive layer over a substrate; an oxide semiconductor layer which covers the first conductive layer; a second conductive layer in a region which is not overlapped with the first conductive layer over the oxide semiconductor layer; an insulating layer which covers the oxide semiconductor layer and the second conductive layer; and a third conductive layer in a region including at least a region which is not overlapped with the first conductive layer or the second conductive layer over the insulating layer.