Oxide Semiconductor Buried Channel Structure for High Current
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Solution Overview
Problem
Current semiconductor devices using silicon for power applications face limitations in temperature range and performance due to silicon's small band gap, and there is a need for a semiconductor device that can handle high drain current and provide high reliability.
Innovation Solution
A semiconductor device with an oxide semiconductor layer, including a stacked structure of oxide layers and a ring-shaped gate electrode configuration, which allows for increased conductivity and reduced series resistance, enabling high current flow and improved reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If silicon is used for power device, then the device can be manufactured with established technology, but the temperature range of operation is limited and performance reaches its limit
Solution Approach 1:
The patent changes the material parameter from silicon to oxide semiconductor, fundamentally altering the band gap characteristic to enable high-temperature operation and enhanced performance while maintaining compatibility with existing manufacturing processes
Solution Approach 2:
The invention employs a composite structure combining oxide semiconductor layer with silicon-based electrodes and insulating layers, creating a hybrid device that leverages the advantages of both material systems to achieve high-temperature reliability and high current capability
2Reliability
If conventional semiconductor structure is used, then the device structure is simple, but large current cannot flow and high drain current capability is not achieved
Solution Approach 1:
The oxide semiconductor layer is segmented into multiple layers with different functions: a first oxide semiconductor layer for high current conduction and a second oxide semiconductor layer for channel formation, enabling the device to handle large currents while maintaining transistor functionality
Solution Approach 2:
Different regions of the oxide semiconductor structure are assigned different properties: the region between source and drain electrodes is optimized for high conductivity to carry large current, while the channel region under the gate is optimized for field-effect control, achieving both high current capability and device functionality
3Reliability
If oxide semiconductor layer is introduced to improve current capability, then high drain current can be achieved, but the device structure becomes more complex
Solution Approach 1:
The oxide semiconductor layers serve multiple functions simultaneously: they provide high current conduction paths, form the transistor channel region, and interface with the gate electrode for electrical control, thereby achieving high drain current capability without proportionally increasing structural complexity
Data Source
AI summary
A semiconductor device that includes an oxide semiconductor and is suitable for a power device having an ability to allow large current to flow therein. The semiconductor device includes: a first electrode having an opening and a second electrode provided in the opening of the first electrode and separated from the first electrode, over the semiconductor layer; a gate insulating layer over the first electrode, the second electrode, and the semiconductor layer; and a ring-shaped gate electrode over the gate insulating layer. An inner edge portion of the ring-shaped gate electrode overlaps the second electrode, while an outer edge portion of the ring-shaped gate electrode overlaps a part of the oxide semiconductor layer, which is located between the first electrode and the second electrode. An element imparting conductivity to the oxide semiconductor layer is added to the part.