Oxide Semiconductor Transistor Channel Segmentation
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Solution Overview
Problem
Current semiconductor devices face challenges in achieving high storage capacity, low power consumption, and reliability, particularly in miniaturized forms, with existing oxide semiconductor technologies struggling to maintain data retention and reduce off-state current effectively.
Innovation Solution
The semiconductor device incorporates a circuit configuration with oxide semiconductors in the channel formation region, including transistors with back gates and capacitors, which allows for efficient data storage and retrieval by maintaining potential differences across storage nodes, reducing leakage currents, and enhancing data retention over extended periods.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Use of energy by moving object
If oxide semiconductors are used for channel layer to achieve miniaturization and lower power consumption, then power consumption is reduced and device size is minimized, but data retention and reliability deteriorate
Solution Approach 1:
The transistor channel is divided into two distinct regions: a first channel region made of oxide semiconductor for low power consumption, and a second channel region made of non-oxide semiconductor for high reliability. This segmentation allows each region to perform its specialized function - the oxide region minimizes leakage current while the non-oxide region ensures stable data retention
Solution Approach 2:
Different semiconductor materials are applied to different portions of the channel based on functional requirements. The oxide semiconductor is placed in the first channel region where low leakage is critical, while non-oxide semiconductor is placed in the second channel region where stability and data retention are prioritized, creating local optimization of material properties
2Object-generated harmful factors
If oxide semiconductors are used to reduce off-state current, then leakage current is reduced, but data retention capability deteriorates
Solution Approach 1:
The channel is segmented into two functional zones with different semiconductor materials. The first channel region using oxide semiconductor effectively suppresses off-state leakage current, while the second channel region using non-oxide semiconductor provides the stability needed for long-term data retention, thus resolving the contradiction between leakage reduction and data retention
Solution Approach 2:
The transistor employs a composite channel structure combining oxide semiconductor and non-oxide semiconductor materials. This composite approach leverages the complementary strengths of both materials - the low leakage特性 of oxide semiconductors and the high stability特性 of non-oxide semiconductors - to achieve both low off-state current and extended data retention simultaneously
Data Source
AI summary
To provide a small, highly reliable memory device with a large storage capacity. A semiconductor device includes a circuit for retaining data and a circuit for reading data. The circuit for retaining data includes a transistor and a capacitor. The circuit for reading data is configured to supply a potential to the circuit for retaining data and read a potential from the circuit for retaining data. The circuit for retaining data and the circuit for reading data are provided in different layers, so that the semiconductor device with a large storage capacity is manufactured.