Inorganic Oxide Semiconductor Layer for Charge Transfer
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Solution Overview
Problem
The existing stacked imaging elements face challenges in efficiently transferring charge accumulated in the photoelectric conversion layer due to complex production processes and lack of specific material compositions, leading to decreased manufacturing yield and inadequate charge transfer properties.
Innovation Solution
Incorporating an inorganic oxide semiconductor material layer with a composition of Ga, Sn, Zn, and O atoms, represented as GaaSnbZncOd, between the first electrode and the photoelectric conversion layer, optimizing the optical gap, oxygen deficiency generation energy, and carrier mobility to enhance charge transfer efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a complex production process is used to form the accumulation electrode and second insulating layer with the same length and fine interval definition, then charge transfer precision is improved, but manufacturing complexity increases and manufacturing yield decreases
Solution Approach 1:
The patent extracts the charge accumulation function from the complex electrode-insulator structure and implements it using a simple semiconductor layer with intrinsic charge accumulation capability. This eliminates the need for the accumulation electrode and second insulating layer, thereby simplifying the production process while maintaining charge transfer precision.
Solution Approach 2:
The patent changes the material parameter by using an inorganic oxide semiconductor material with specific properties (high carrier mobility, appropriate band gap) to form the semiconductor layer. This material parameter change enables efficient charge transfer without requiring complex structural arrangements, thus resolving the contradiction between precision and complexity.
2Manufacturing precision
If the accumulation electrode and second insulating layer are formed with the same length and fine interval, then charge transfer accuracy is improved, but manufacturing yield decreases
Solution Approach 1:
The patent removes the accumulation electrode and second insulating layer from the structure, eliminating the manufacturing steps that require precise length matching and fine interval definition. This extraction of unnecessary components directly improves manufacturing yield while maintaining charge transfer accuracy through the semiconductor layer's inherent properties.
3Use of energy by moving object
If organic semiconductor material is used in the photoelectric conversion layer, then photoelectric conversion efficiency for specific wavelengths is improved, but charge transfer speed decreases
Solution Approach 1:
The patent employs a composite material system consisting of organic photoelectric conversion layer combined with inorganic oxide semiconductor material layer. The organic layer provides high photoelectric conversion efficiency for specific wavelengths, while the inorganic oxide semiconductor layer provides high carrier mobility for fast charge transfer, thus resolving the contradiction between conversion efficiency and transfer speed.
Solution Approach 2:
The patent changes the material parameter by introducing inorganic oxide semiconductor material with high carrier mobility into the charge transfer path. This parameter change (material composition) enables rapid charge transfer from the photoelectric conversion layer to the electrode, compensating for the slower charge transfer characteristic of organic semiconductors while preserving their high photoelectric conversion efficiency.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enables efficient and reliable charge transfer with improved manufacturing simplicity, increased carrier mobility, and enhanced image quality by utilizing the inorganic oxide semiconductor material layer to accumulate and transfer charge effectively, addressing the limitations of existing technologies.
Implementation Method 1
signal charge generated in the photoelectric conversion layer on the basis of photoelectric conversion
Implementation Method 2
charge generated through photoelectric conversion in the first photoelectric conversion unit is accumulated in a first floating diffusion layer
Data Source
AI summary
An imaging element according to the present disclosure includes: a photoelectric conversion unit that is configured of a first electrode 21 and a photoelectric conversion layer 23A and a second electrode 22 including an organic material being laminated, an inorganic oxide semiconductor material layer 23B is formed between the first electrode 21 and the photoelectric conversion layer 23A, and an inorganic oxide semiconductor material configuring the inorganic oxide semiconductor material layer 23B contains gallium (Ga) atoms, tin (Sn) atoms, zinc (Zn) atoms, and oxygen (O) atoms.