Oxide Semiconductor Circuit Board Wet Etching Productivity
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Solution Overview
Problem
Current processes for producing active matrix substrates using amorphous silicon TFTs face challenges in productivity due to the need for multiple dry etching steps, high equipment investment, and difficulty in performing wet etching on amorphous silicon films without damaging source metal layers.
Innovation Solution
The use of an oxide semiconductor layer, such as IGZO, with an electrode laminated with a metal other than copper, like molybdenum or titanium, allows for controlled wet etching, reducing the number of dry etching steps and improving productivity by enhancing the selectivity between the oxide semiconductor layer and the source metal layer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If amorphous silicon TFTs are used with multiple dry etching steps, then manufacturing precision is maintained, but productivity decreases and equipment investment increases
Solution Approach 1:
The patent changes the material parameter of the semiconductor layer from amorphous silicon to oxide semiconductor, which fundamentally alters the etching characteristics. This material parameter change enables the use of wet etching instead of multiple dry etching steps, thereby improving productivity while maintaining manufacturing precision through selective etching based on material properties
Solution Approach 2:
The patent substitutes the mechanical/physical dry etching process with a chemical wet etching process. By using wet etching with appropriate selectivity, the need for multiple sequential dry etching steps is eliminated, reducing equipment requirements and improving production efficiency while achieving the desired patterning precision
2Productivity
If wet etching is performed on amorphous silicon films, then productivity improves, but source metal layers are damaged
Solution Approach 1:
The patent changes the semiconductor material from amorphous silicon to oxide semiconductor, which has different chemical properties. This parameter change enables selective wet etching where the oxide semiconductor can be etched by specific solutions without attacking the source metal layer, thus improving productivity while preserving metal layer integrity
Solution Approach 2:
The patent introduces a selective etching solution that acts as an intermediary between the semiconductor layer and the metal layer. This etchant selectively removes the oxide semiconductor material while leaving the metal layer untouched, enabling wet etching to proceed without damaging the source metal layer
3Productivity
If oxide semiconductor layer is used with selective wet etching, then productivity improves and equipment investment reduces, but manufacturing precision must be maintained
Solution Approach 1:
The patent utilizes the chemical parameter differences between oxide semiconductor and other materials to achieve selective etching. By carefully controlling the etching solution composition and process parameters, high manufacturing precision is maintained while enabling efficient wet etching processes that improve productivity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach improves the production yield rate and reduces equipment investment by enabling efficient wet etching of the semiconductor and source layers, leading to a more productive and cost-effective circuit board manufacturing process.
Implementation Method 1
the use of an oxide semiconductor layer, such as IGZO, with an electrode laminated with a metal other than copper, like molybdenum or titanium, allows for controlled wet etching
Data Source
AI summary
The present invention provides a circuit board having excellent productivity, particularly a circuit board having excellent productivity with respect to a semiconductor layer and source layer forming step, a display device, and a process for producing a circuit board. The circuit board of the present invention is a circuit board including an oxide semiconductor layer and an electrode connected to the oxide semiconductor layer, wherein the electrode is formed by essentially laminating a layer made of a metal other than copper and a layer containing copper.