Oxide Semiconductor Transistor with Closed-Loop Hydrogen Barrier
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Solution Overview
Problem
Semiconductor devices using oxide semiconductors face issues with hydrogen diffusion leading to increased hydrogen concentration, oxygen vacancies, and normally-on transistor behavior, which affect electric characteristics and reliability.
Innovation Solution
Incorporating a closed-loop shaped hydrogen barrier film and water barrier film, such as silicon nitride or aluminum oxide, to suppress hydrogen and water diffusion, thereby reducing oxygen vacancies and controlling threshold voltage, ensuring a normally-off transistor with low off-state current.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If oxide semiconductor film is used in transistor, then new semiconductor material properties are achieved, but hydrogen diffusion causes normally-on behavior and reliability issues
Solution Approach 1:
A hydrogen barrier film is introduced as an intermediary layer between the oxide semiconductor film and the environment. This barrier film prevents hydrogen from reaching the oxide semiconductor film, thereby eliminating the harmful effect of hydrogen diffusion while allowing the oxide semiconductor to maintain its desirable electrical properties
Solution Approach 2:
The invention converts the harmful effect of hydrogen diffusion into a benefit by using the hydrogen barrier film to selectively block hydrogen while potentially allowing other necessary substances to pass through. The barrier film transforms the potential harm of hydrogen exposure into a controlled environment that enhances device reliability
2Reliability
If hydrogen barrier film is added to suppress hydrogen diffusion, then transistor reliability improves, but device structure becomes more complex
Solution Approach 1:
The hydrogen barrier is implemented as a thin film layer rather than a bulky structure. This thin film approach provides effective hydrogen blocking while adding minimal structural complexity and maintaining device compactness
Solution Approach 2:
The device structure combines the oxide semiconductor film with a hydrogen barrier film layer, creating a composite structure that leverages the beneficial properties of each material while mitigating their individual drawbacks
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively improves the electric characteristics and reliability of oxide semiconductor transistors by reducing hydrogen diffusion, oxygen vacancies, and maintaining a stable threshold voltage, resulting in a semiconductor device with enhanced performance.
Implementation Method 1
a first film, a transistor, and a second film... each have a function of suppressing diffusion of one or more of hydrogen, water, and the like
Data Source
AI summary
The electric characteristics of a semiconductor device using an oxide semiconductor are improved. The reliability of a semiconductor device using an oxide semiconductor is improved. The semiconductor device includes an element layer. The element layer includes a first film, a transistor, and a second film. The first film and the second film are partly in contact with each other. The region in which the first film and the second film are in contact with each other has a closed-loop shape when seen from above. The transistor is located between the first film and the second film. The region in which the first film and the second film are in contact with each other is located between a side surface of the element layer and the transistor.