Oxide Semiconductor Common Wiring for Display Aperture Ratio

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Solution Overview

Problem

In display devices with self-capacitance type touch sensors, the use of metal common wirings reduces the aperture ratio of the display portion, as these wirings occupy space that could be used for pixels.

Innovation Solution

The implementation of a display device structure where the common wiring is composed of an oxide semiconductor layer with a polycrystalline structure, which not only functions as an active layer in semiconductor devices but also as a light-transmittive material for the common wiring, thereby improving the aperture ratio.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If metal common wirings are used in self-capacitance type touch sensors, then electrical connectivity and conductivity are improved, but the aperture ratio of the display portion is reduced due to space occupation

Engineering Contradiction:
Improveelectrical connectivityVSAvoidaperture ratio
Core Design Contradiction:
ReliabilityVSArea of stationary object

Solution Approach 1:

The patent changes the material parameter of the common wiring from metal to oxide semiconductor layer, which has different optical properties (light transmissivity) while maintaining electrical conductivity functionality

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent uses oxide semiconductor material that combines both light transmissivity and electrical conductivity properties in a single material system, allowing the common wiring to function as both an electrical conductor and a light-transparent element

Inventive Principle:
Principle #40Composite materials

2Reliability

If metal common wirings are used, then electrical conductivity is ensured, but the structure becomes more complex and the aperture ratio is reduced

Engineering Contradiction:
Improveelectrical conductivityVSAvoidstructure
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent merges the function of the common wiring with the existing oxide semiconductor layer structure, eliminating the need for separate metal wiring layers and simplifying the overall device structure

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The oxide semiconductor layer serves multiple functions: as the active layer in semiconductor devices, as the common wiring material, and as a light-transparent material, thereby reducing structural complexity

Inventive Principle:
Principle #6Universality (Multi-functionality)

Data Source

PatentUS12287552B2Display device
Publication Date: 2025.04.29 JAPAN DISPLAY INC
  • US12287552B2 patent drawing
  • US12287552B2 patent drawing
  • US12287552B2 patent drawing

AI summary

A display device includes a plurality of pixel electrodes each connected to a semiconductor device, a plurality of common electrodes each disposed opposite to a part of the plurality of pixel electrodes, and a plurality of common wirings each connected to the plurality of common electrodes. The semiconductor device includes an oxide semiconductor layer having a polycrystalline structure, and at least a part of each common wiring is composed of the oxide semiconductor layer. Each common electrode may be located across a plurality of pixel electrodes.