Oxide Semiconductor Channel Crystal Region Breakdown Voltage
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing semiconductor devices using oxide semiconductors fail to achieve adequate characteristics, particularly in terms of breakdown voltage, when used in actual conditions.
Innovation Solution
A semiconductor device with a novel structure incorporating an oxide semiconductor layer having a crystal region in the surface part, which includes a crystal region of In2Ga2ZnO7, is used, along with a method of manufacturing that involves forming conductive layers and insulating layers to enhance breakdown voltage and operational characteristics.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If oxide semiconductor is used in channel formation region, then transparency and flexibility are improved, but breakdown voltage and semiconductor characteristics are insufficient
Solution Approach 1:
The patent applies local quality by creating a crystal region specifically in the surface part of the oxide semiconductor layer where the channel formation region is located. This localized crystallization provides the necessary semiconductor characteristics and breakdown voltage in the critical channel area while maintaining the amorphous structure in other regions that offers manufacturing ease and flexibility.
Solution Approach 2:
The patent uses a composite structure combining crystalline and amorphous regions within the oxide semiconductor layer. The crystal region provides high breakdown voltage and stable semiconductor characteristics, while the amorphous regions maintain manufacturing advantages. This composite approach allows the material to exhibit both transparency/flexibility and adequate breakdown voltage.
2Device complexity
If oxide semiconductor layer is formed without crystal region, then manufacturing simplicity is maintained, but breakdown voltage remains inadequate
Solution Approach 1:
The patent introduces a crystal region specifically in the surface part of the oxide semiconductor layer corresponding to the channel formation region. This localized structural modification enhances breakdown voltage without requiring complete crystallization of the entire layer, thus maintaining relatively simple manufacturing processes while achieving the necessary reliability.
3Reliability
If crystal region is formed in oxide semiconductor layer, then breakdown voltage is improved, but manufacturing complexity increases
Solution Approach 1:
The patent limits crystallization to only the surface part of the oxide semiconductor layer where the channel formation region exists. This localized approach achieves improved breakdown voltage and semiconductor characteristics while avoiding the need to crystallize the entire thick oxide semiconductor layer, thereby controlling manufacturing complexity.
Solution Approach 2:
The patent applies partial action by forming a crystal region only in the necessary surface portion of the oxide semiconductor layer rather than crystallizing the entire layer. This partial crystallization provides sufficient breakdown voltage improvement while reducing manufacturing complexity compared to complete crystallization.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The semiconductor device achieves improved breakdown voltage and stable circuit operation due to the crystal region in the oxide semiconductor layer, while maintaining high productivity and low manufacturing costs.
Implementation Method 1
an oxide semiconductor layer which overlaps with part of the first conductive layer over the first insulating layer and has a crystal region in a surface part
Implementation Method 2
a method for manufacturing the semiconductor device... heat treatment of the oxide semiconductor layer
Data Source
AI summary
It is an object to provide a semiconductor device having a new productive semiconductor material and a new structure. The semiconductor device includes a first conductive layer over a substrate, a first insulating layer which covers the first conductive layer, an oxide semiconductor layer over the first insulating layer that overlaps with part of the first conductive layer and has a crystal region in a surface part, second and third conductive layers formed in contact with the oxide semiconductor layer, an insulating layer which covers the oxide semiconductor layer and the second and third conductive layers, and a fourth conductive layer over the insulating layer that overlaps with part of the oxide semiconductor layer.