Oxide Semiconductor Film Defect Reduction
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Solution Overview
Problem
Current oxide semiconductor films have high densities of shallow defect states at their interfaces with insulating films, which affect the electrical characteristics and reliability of transistors, such as on-state current, field-effect mobility, and saturation characteristics.
Innovation Solution
An oxide semiconductor film comprising In, M (where M is Al, Ga, Y, or Sn), and Zn, with a region having a peak value of shallow defect states less than 1×10^13 cm^-2 eV^-1, and a c-axis alignment structure, is developed to reduce defect states and enhance crystallinity, thereby improving transistor performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional oxide semiconductor films are used, then the transistor can be fabricated, but the density of shallow defect states at the interface with insulating films is high, degrading electrical characteristics
Solution Approach 1:
The patent changes the compositional parameters of the oxide semiconductor film by incorporating In, M (Al, Ga, Y, or Sn), and Zn in specific atomic ratios. This compositional parameter change reduces the density of shallow defect states at the interface with insulating films, thereby improving transistor electrical characteristics while maintaining fabricability
Solution Approach 2:
The patent creates a composite oxide semiconductor material combining multiple metal elements (In, M, and Zn) with oxygen in specific proportions. This composite structure reduces interface defect states compared to conventional single-component oxide semiconductors, improving reliability without complicating the fabrication process
2Reliability
If the oxide semiconductor film composition is optimized to reduce defect states, then transistor reliability improves, but the manufacturing process complexity increases
Solution Approach 1:
The patent establishes specific atomic ratio ranges for In:M:Zn (where M is Al, Ga, Y, or Sn) to achieve low defect state densities. By defining clear compositional parameters and ranges, the patent optimizes transistor reliability while keeping the manufacturing process manageable through controlled material deposition
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution results in transistors with excellent electrical characteristics, including high field-effect mobility and reliable saturation characteristics, by minimizing defect states and oxygen vacancies in the oxide semiconductor film and its interface with insulating films.
Implementation Method 1
an oxide semiconductor film which includes In, M (M is Al, Ga, Y, or Sn), Zn, and a region in which a peak value of a density of shallow defect states is less than 1×10^13 cm^-2 eV^-1
Data Source
AI summary
A novel oxide semiconductor film. An oxide semiconductor film with a small amount of defects. An oxide semiconductor film in which a peak value of the density of shallow defect states at an interface between the oxide semiconductor film and an insulating film is small. The oxide semiconductor film includes In, M (M is Al, Ga, Y, or Sn), Zn, and a region in which a peak value of a density of shallow defect states is less than 1E13 per square cm per volt.