Oxide Semiconductor Display Device Etching Stopper Layer
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Solution Overview
Problem
Existing display devices using oxide semiconductor layers face challenges in reducing the number of multilayer films and etching steps, which can lead to disconnection of data lines and decreased display performance due to etching-related issues.
Innovation Solution
A display device structure featuring a transparent substrate with gate electrodes, a gate insulating film, an oxide semiconductor layer, and etching stopper layers between the oxide semiconductor and electrodes, along with multilayer drain and source electrodes that directly contact the oxide semiconductor, and integrated pixel electrodes formed from the same transparent conductive film, reducing the risk of etching damage and increasing aperture ratio.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If the oxide semiconductor layer is formed to cover the data lines, then the direct connection between data lines and oxide semiconductor is achieved, but the oxide semiconductor layer can be easily disconnected at the steps of data lines
Solution Approach 1:
A protective film is introduced as an intermediary layer between the oxide semiconductor layer and the data line etching process. This protective film prevents the etchant from directly contacting and damaging the oxide semiconductor layer at the data line steps, thereby maintaining connection reliability while preserving the direct connection structure.
Solution Approach 2:
The protective film is formed preliminarily before the data line etching process. This preliminary protective action ensures that the oxide semiconductor layer is shielded from etching damage before the harmful etching action occurs, preventing disconnection at the data line steps.
2Device complexity
If pixel electrodes and oxide semiconductor layer are processed after data line formation, then the direct connection structure is maintained, but data lines may be dissolved or corroded by etchant
Solution Approach 1:
The protective film serves as an intermediary barrier during the pixel electrode and oxide semiconductor layer processing. It prevents the etchant used in these subsequent processing steps from dissolving or corroding the data lines, thereby maintaining data line integrity while allowing the processing sequence to be maintained.
Solution Approach 2:
The protective film provides beforehand cushioning against etchant damage to the data lines. By being in place before the etching of pixel electrodes and oxide semiconductor layer, it cushions the data lines from the harmful effects of the etchant, preventing dissolution or corrosion.
3Manufacturing precision
If multiple multilayer films and etching steps are used, then selective etching precision is improved, but the number of manufacturing steps and cost increase
Solution Approach 1:
The protective film is merged with the existing insulating film structure, combining the functions of insulation and protection in a single integrated layer. This merging approach provides the necessary protective function without requiring separate additional manufacturing steps, thereby maintaining manufacturing precision while reducing process complexity.
Data Source
AI summary
The present invention provides a display device having: gate electrodes formed on a transparent substrate; a gate insulating film for covering the gate electrodes; an oxide semiconductor formed on the gate insulating film; drain electrodes and source electrodes formed at a distance from each other with channel regions of the oxide semiconductor in between; an interlayer capacitor film for covering the drain electrodes and source electrodes; common electrodes formed on top of the interlayer capacitor film; and pixel electrodes formed so as to face the common electrodes, and wherein an etching stopper layer for covering the channel regions is formed between the oxide semiconductor and the drain electrodes and source electrodes, the drain electrodes are a multilayer film where a transparent conductive film and a metal film are layered on top of each other, and the drain electrodes and source electrodes make direct contact with the oxide semiconductor.