Oxide Semiconductor Display Through Hole Hydrogen Diffusion
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Solution Overview
Problem
Using a transistor containing an oxide semiconductor in its channel in a display device decreases the display quality in a prescribed location.
Innovation Solution
A display device structure that includes an oxide semiconductor film, an interlayer insulating film, and a pixel circuit board with a first effective circuit region on the outermost periphery, featuring a contact hole through the interlayer insulating film and a through hole adjacent to the first effective circuit region outside the effective circuit region group.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If a transistor containing an oxide semiconductor in its channel is used in a display device, then the device can be manufactured with oxide semiconductor technology, but the display quality decreases in prescribed locations
Solution Approach 1:
The patent applies local quality by providing through holes at specific locations (outer peripheral portions of the pixel circuit board) rather than uniformly across the entire board. This localized approach allows hydrogen to be removed from critical areas where oxide semiconductor transistors are positioned, while maintaining the integrity of the display region. The selective placement of through holes addresses the display quality issue in prescribed locations without compromising the overall manufacturability of the oxide semiconductor-based device.
2Manufacturing precision
If the pixel circuit board structure is modified to improve display quality, then the hydrogen diffusion problem is reduced, but the device structure becomes more complex
Solution Approach 1:
The patent segments the pixel circuit board into different functional regions: effective circuit regions for display, dummy circuit regions for hydrogen removal, and through hole regions for hydrogen evacuation. This segmentation allows the structure to address hydrogen diffusion issues without requiring complete redesign of the entire pixel circuit board. The dummy circuit regions and strategically placed through holes create a segmented hydrogen management system that reduces complexity compared to a complete structural overhaul.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This structure enhances the display quality by restraining the diffusion of hydrogen atoms into the oxide semiconductor film, thereby maintaining the channel properties and reducing the likelihood of display defects.
Implementation Method 1
restraining the diffusion of hydrogen atoms into the oxide semiconductor film
Data Source
AI summary
A display device includes: an oxide semiconductor film; an interlayer insulating film in contact with the oxide semiconductor film; and a pixel circuit board including an effective circuit region group configured to contribute to a display, wherein the pixel circuit board has a first effective circuit region located on an outermost periphery of the effective circuit region group and including the oxide semiconductor film, the first effective circuit region has a contact hole extending through the interlayer insulating film, and a through hole extending through the interlayer insulating film is provided adjacent to the first effective circuit region outside the effective circuit region group.