Oxide Semiconductor Double-Well Structure for High Current
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Solution Overview
Problem
Current semiconductor devices, particularly power devices, face limitations in performance and temperature range due to silicon's narrow band gap, and existing oxide semiconductor solutions do not adequately address the need for high-power applications with high reliability and large current handling.
Innovation Solution
A semiconductor device structure incorporating an oxide semiconductor layer with an n-type region for the main current path and an i-type region for pinch-off operation, featuring a specific layer configuration including a first and second oxide semiconductor layer, oxide layers, and electrode layers to enhance current handling and reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If silicon is used for power devices, then the devices are widely prevalent and manufacturable, but the performance reaches its limit and temperature range is restricted due to narrow band gap
Solution Approach 1:
The patent changes the fundamental material parameter (band gap) by transitioning from silicon to oxide semiconductor. This parameter change enables operation at higher temperatures and voltages, directly resolving the temperature range limitation while maintaining device performance and reliability.
Solution Approach 2:
The patent employs a composite structure combining n-type oxide semiconductor layer for high-current conduction with i-type oxide semiconductor layer for pinch-off control. This composite material approach achieves both high performance and adaptability to high-power applications while overcoming silicon's inherent limitations.
2Reliability
If oxide semiconductor is used for high-power applications, then performance and temperature range improve, but the structure becomes more complex with multiple layers
Solution Approach 1:
The patent segments the oxide semiconductor into functionally distinct layers: an n-type oxide semiconductor layer for high-current conduction and an i-type oxide semiconductor layer for pinch-off control. This segmentation allows each layer to optimize its specific function, achieving high-power capability while maintaining manageable structural complexity through clear functional division.
Solution Approach 2:
Different regions of the oxide semiconductor structure are assigned different conductivity types (n-type and i-type) to perform different functions. The n-type region handles high current, while the i-type region provides pinch-off control. This local quality differentiation enables high-power operation without requiring the entire structure to be overly complex.
3Productivity
If an n-type oxide semiconductor layer is used for main current path, then on-state current increases, but manufacturing precision requirements increase
Solution Approach 1:
The patent changes the conductivity type parameter of the oxide semiconductor to n-type, which fundamentally alters the electrical characteristics to enable high on-state current. This parameter change is achieved through controlled doping or oxygen deficiency, providing a manufacturable approach to enhancing current capability while managing precision requirements through established material processing techniques.
Data Source
AI summary
Disclosed is a semiconductor device including two oxide semiconductor layers, where one of the oxide semiconductor layers has an n-doped region while the other of the oxide semiconductor layers is substantially i-type. The semiconductor device includes the two oxide semiconductor layers sandwiched between a pair of oxide layers which have a common element included in any of the two oxide semiconductor layers. A double-well structure is formed in a region including the two oxide semiconductor layers and the pair of oxide layers, leading to the formation of a channel formation region in the n-doped region. This structure allows the channel formation region to be surrounded by an i-type oxide semiconductor, which contributes to the production of a semiconductor device that is capable of feeding enormous current.