Oxide Semiconductor Dual Gate Structure Oxygen Vacancy Prevention
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Solution Overview
Problem
The challenge in forming semiconductor devices with oxide semiconductor materials is the susceptibility of the oxide semiconductor layer to damage during production, leading to performance issues due to oxidation and oxygen vacancy phenomena.
Innovation Solution
A semiconductor structure with a dual gate structure is developed, featuring a substrate with an oxide semiconductor layer, source/drain regions, a high-k dielectric layer, and a bottom oxide layer, where an additional thermal oxygen treatment is performed to improve the quality of the oxide semiconductor layer and prevent oxygen vacancies.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If oxide semiconductor material is used in semiconductor devices, then the device can utilize semiconductor material properties for diverse applications, but the oxide semiconductor layer is easily damaged during production due to oxidation
Solution Approach 1:
A bottom oxide layer is formed beforehand to entirely cover the source/drain regions before the oxide semiconductor layer is deposited. This preliminary protective layer prevents oxidation of the oxide semiconductor layer during subsequent production processes, thereby maintaining its quality while enabling versatile semiconductor applications
Solution Approach 2:
The bottom oxide layer acts as an intermediary protective barrier between the source/drain regions and the oxide semiconductor layer. This intermediate layer prevents direct contact and potential oxidation damage, allowing the oxide semiconductor layer to maintain its integrity and performance in diverse semiconductor applications
2Ease of manufacture
If conventional production methods are used, then the manufacturing process is simple, but oxygen vacancy phenomenon occurs in the oxide semiconductor layer affecting performance
Solution Approach 1:
The bottom oxide layer is formed in advance before depositing the oxide semiconductor layer. This preliminary structure prevents oxygen vacancies by providing a protective barrier that eliminates the need for complex post-processing treatments, thereby maintaining both manufacturing simplicity and high layer quality
Solution Approach 2:
The bottom oxide layer serves as a beforehand cushioning layer that prevents oxygen diffusion into the oxide semiconductor layer during production. This prior protective measure cushions against oxidation damage and prevents oxygen vacancy formation, ensuring high manufacturing precision without complicating the production process
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The dual gate structure enhances the quality of the oxide semiconductor layer, reducing the risk of damage and improving the overall performance of the semiconductor device by avoiding oxygen vacancy issues.
Implementation Method 1
a thermal process is performed on the high-k dielectric layer
Implementation Method 2
a plasma treatment is performed on the high-k dielectric layer in the presence of a gas containing an oxygen element
Data Source
AI summary
The present invention provides a method of forming a semiconductor device. First, a substrate having a first insulating layer formed thereon is provided. After forming an oxide semiconductor layer on the first insulating layer, two source/drain regions are formed on the oxide semiconductor layer. A bottom oxide layer is formed to entirely cover the source/drain regions, following by forming a high-k dielectric layer on the bottom oxide layer. Next, a thermal process is performed on the high-k dielectric layer, and a plasma treatment is performed on the high-k dielectric layer in the presence of a gas containing an oxygen element.